The Effect of Post-Fabrication Annealing on an Amorphous IGZO Visible-Light Photodetector

被引：3

作者：

Park, Yongkook ^{[1
]}

Park, Hyung-Youl ^{[1
]}

Kang, Dong-Ho ^{[1
]}

Kim, Gwang-Sik ^{[2
]}

Lim, Donghwan ^{[3
]}

Yu, Hyun-Yong ^{[2
]}

Choi, Changhwan ^{[3
]}

Park, Jin-Hong ^{[1
]}

机构：

[1] Sungkyunkwan Univ, Sch Elect & Elect Engn, Suwon 440746, South Korea

[2] Korea Univ, Sch Elect Engn, Seoul 136701, South Korea

[3] Hanyang Univ, Div Mat Sci & Engn, Seoul 133791, South Korea

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2016年 / 16卷 / 11期

基金：

新加坡国家研究基金会;

关键词：

Amorphous IGZO; Oxygen Vacancy; Thermal Annealing; Photodetector;

D O I：

10.1166/jnn.2016.13586

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We demonstrate the effect of the thermal annealing temperature (250 and 300 degrees C) on the performance (photosensitivity and temporal photoresponse) of an amorphous indium-gallium-zinc-oxide (alpha-IGZO) photodetector based on the TFT structure to visible radiation. Analysis of photosensitivity was performed to assess various sensing parameters, such as photoresponsivity (R-ph), threshold voltage (V-TH) shift, and subthreshold swing (SS). The photosensitivity was improved as the wavelength of light decreased and the annealing temperature increased. This was analyzed based on the activation energy for the ionization of an oxygen vacancy (V-o) and the concentration of Vo in relation to the thermal annealing condition. The temporal photoresponse of the alpha-IGZO device are also presented. The photoresponse times improved as the annealing temperature increased, which was due to the increase in the concentration of V-o functioning as a generation and recombination center with increasing annealing temperature.

引用

页码：11745 / 11749

页数：5

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