Micro-imprinted prism substrate for self-aligned short channel organic transistors on a flexible substrate

被引:13
作者
Jeon, Jin [1 ]
Tee, Benjamin C. -K. [1 ]
Murmann, Boris [1 ]
Bao, Zhenan [2 ]
机构
[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
[2] Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA
关键词
FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; LARGE-AREA; PERFORMANCE;
D O I
10.1063/1.3679119
中图分类号
O59 [应用物理学];
学科分类号
摘要
Using a simple micro-imprinting process on flexible substrates, we demonstrate fabrication of self-aligned short channel organic thin film transistors (OTFTs) with significantly reduced parasitic capacitance. The surface topology resulting from the imprinted prism-like structures enables accurate alignment of both the gate and source-drain electrodes. The parasitic overlap capacitance was reduced by 80%, which enables twice higher transition frequency (f(T) = 10.1 kHz) compared with conventional top-contact OTFT devices. The prism-OTFTs were applied to both p-type (pentacene) and n-type (C60) organic semiconductors to implement low voltage complementary inverters. (C) 2012 American Institute of Physics. [doi:10.1063/1.3679119]
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页数:4
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