Spectroscopic study and optical and electrical properties of Ti-doped ZnO thin films by spray pyrolysis

被引:39
作者
Sridhar, R. [1 ]
Manoharan, C. [1 ]
Ramalingam, S. [2 ]
Dhanapandian, S. [1 ]
Bououdina, M. [3 ,4 ]
机构
[1] Annamalai Univ, Dept Phys, Annamalainagar 608002, Tamil Nadu, India
[2] AVC Coll, Dept Phys, Mayiladuthurai, Tamil Nadu, India
[3] Univ Bahrain, Nanotechnol Ctr, Isa Town, Bahrain
[4] Univ Bahrain, Dept Phys, Coll Sci, Isa Town, Bahrain
关键词
ZnO thin films; Ti doping; Raman; Photoluminescence; Resistivity; POLYCRYSTALLINE ZNO/TIO2 SYSTEMS; PHOTOCATALYTIC DEGRADATION; TEMPERATURE; SURFACE; RF;
D O I
10.1016/j.saa.2013.09.149
中图分类号
O433 [光谱学];
学科分类号
0703 ; 070302 ;
摘要
Zinc oxide films were doped with different concentrations of Ti on glass substrates at 400 degrees C by spray pyrolysis technique. The films exhibited single phase ZnO for low concentrations of Ti. Wurtzite ZnO peaks were observed at higher doping concentration with decreased crystallinity. Crystallite size, strain and dislocation density were evaluated from the X-ray diffraction data. Surface morphology of the films indicated that a remarkable decrease in grain size with increasing of Ti concentration. The band gap of the films was found to be increased from 3.20 eV to 332 eV as the concentration of Ti doping increases. The resistivity of the films decreased from 9 x 10(5) Omega cm to 9 x 10(4) Omega cm with the increase of Ti doping concentration. Both Raman spectroscopy and room temperature photoluminescence exhibited characteristic peaks that confirmed the formation of ZnO phase. Crown Copyright (C) 2013 Published by Elsevier B.V. All rights reserved.
引用
收藏
页码:297 / 303
页数:7
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