Thermal annealing in FHD Ge-doped SiO2 film for applications in optical waveguides

被引：6

作者：

Zhang, LT ^{[1
]}

Xie, WF

Wang, J

Li, AW

Xing, H

Zheng, W

Zhang, YS

机构：

[1] Jilin Univ, Natl Integrated Optoelect Lab, Changchun 130023, Peoples R China

[2] Jilin Univ, Coll Phys, Changchun 130023, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2004年 / 228卷 / 1-4期

关键词：

Ge-doped SiO2; flame hydrolysis deposition; thermal annealing;

D O I：

10.1016/j.apsusc.2003.12.022

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Thermal annealing effects on the microstructures and optical properties of Ge-doped SiO2 films fabricated by flame hydrolysis deposition were investigated. Microstructure modifications from rough to smooth were measured by atomic force microscope at different annealing temperatures. The refractive index (n) and extinction coefficient (k) were obtained by variable angle spectroscopic ellipsometry. It is concluded that k decreased and n increased with increasing annealing temperature. The results suggest the improvement of the film quality can be achieved by thermal annealing. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：48 / 52

页数：5

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