Physical properties of Sb-doped CdSe thin films by thermal evaporation method

被引:36
作者
Ali, Mazhar [1 ]
Syed, Waqar A. A. [1 ]
Zubair, M. [1 ]
Shah, Nazar A. [2 ]
Mehmood, Arshad [3 ]
机构
[1] Int Islamic Univ Islamabad, Dept Phys, Islamabad 45320, Pakistan
[2] COMSATS Inst Informat Technol, Dept Phys, Islamabad 4000, Pakistan
[3] NILOP, Islamabad 45320, Pakistan
关键词
II-VI compounds; Thermal evaporation method; Antimony doping; Physical characterizations; CHEMICAL BATH DEPOSITION; NANOCRYSTALLINE CDSE;
D O I
10.1016/j.apsusc.2013.07.122
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Cadmium selenide (CdSe) thin films were deposited on the glass substrates by using the resistive thermal evaporation method in the vacuum chamber. The effect of antimony doping on the physical properties of CdSe thin film has been investigated. The structural and surface properties such as lattice parameters, grain size, microstrain and dislocation density of the thin films were characterized by X-ray diffraction (XRD) technique. The compositional properties were studied by the mean of Rutherford backscattering (RBS) and UV-Vis-NIR spectrophotometer used to determine the refractive index, absorption coefficient and optical energy band gap of thin films. The FTIR absorption spectra confirmed the presence of CdSe vibrational mode in the range 400 cm(-1) to 700 cm-1. The electrical conductivity of the films was carried out with the help of impedance analyzer, which has been increased up to 1% on Sb doping. The transmission has been reduced up to 18% with the increase in Sb doping and shifted toward lower wavelengths (C) 2013 Elsevier B. V. All rights reserved.
引用
收藏
页码:482 / 488
页数:7
相关论文
共 23 条
[1]  
Acharya A., 2010, LAT AM J PHYS ED, V4, P603
[2]  
Bhargava R., 1997, PROPERTIES WIDE BAND
[3]   Electrodeposition of epitaxial CdSe on (111) gallium arsenide [J].
Cachet, H ;
Cortès, R ;
Froment, M ;
Etcheberry, A .
THIN SOLID FILMS, 2000, 361 :84-87
[4]   Properties of cadmium sulfide thin films deposited by chemical bath deposition with ultrasonication [J].
Choi, JY ;
Kim, KJ ;
Yoo, JB ;
Kim, DH .
SOLAR ENERGY, 1998, 64 (1-3) :41-47
[5]  
Chopra K.L., 1983, THIN FILM SOLAR CELL
[6]  
Girija K, 2009, CHALCOGENIDE LETT, V6, P351
[7]   QUANTUM-SIZE EFFECTS IN THE STUDY OF CHEMICAL SOLUTION DEPOSITION MECHANISMS OF SEMICONDUCTOR-FILMS [J].
GORER, S ;
HODES, G .
JOURNAL OF PHYSICAL CHEMISTRY, 1994, 98 (20) :5338-5346
[8]   Chemical deposition of cubic CdSe and HgSe thin films and their characterization [J].
Hankare, PP ;
Bhuse, VM ;
Garadkar, KM ;
Delekar, SD ;
Mulla, IS .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2004, 19 (01) :70-75
[9]   Study of optical constants in CdxSe1-x [J].
Kaushish, SK ;
Sharma, TP .
OPTICAL MATERIALS, 2000, 14 (04) :297-301
[10]  
Kumbhakar P., 2008, J CHALCOGENIDE LETT, V5, P405