Growth of rubrene crystalline thin films using thermal annealing on DPPC LB monolayer

被引：28
作者：
Du, Chuan [1 ,2 ]
Wang, Wenchong [1 ,2 ]
Li, Liqiang [1 ,2 ]
Fuchs, Harald [1 ,2 ]
Chi, Lifeng [1 ,2 ,3 ]
机构：
[1] Univ Munster, Inst Phys, D-48149 Munster, Germany
[2] Univ Munster, Ctr Nanotechnol CeNTech, D-48149 Munster, Germany
[3] Soochow Univ, FUNSOM, Suzhou 215123, Peoples R China
来源：
ORGANIC ELECTRONICS | 2013年 / 14卷 / 10期
关键词：
Rubrene; High quality crystalline film; Thermal annealing; Langmuir-Blodgett monolayer; Organic thin film transistors (OTFTs); FIELD-EFFECT TRANSISTORS; ELECTRONICS; TRANSPORT; MOBILITY; SURFACE;
D O I：
10.1016/j.orgel.2013.06.006
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
High crystalline thin films of 5,6,11,12-tetraphenylnaphthacene (rubrene) can be obtained after in situ thermal post annealing using SiO2 gate dielectric modified with a 1,2-dipalmitoyl-sn-glycero-3-phosphocholine (DPPC) monolayer obtained via Langmuir-Blodgett transfer. Such formed rubrene crystalline films are interconnected and highly ordered with defined molecular orientation. Organic thin film transistors (OTFTs) with high performance are reproducibly demonstrated with the mobility of 0.98 cm(2)/V s, the threshold voltage of -8 V and the on-off current ratio of higher than 10(7). The results indicate that our approach is a promising one for preparing high quality rubrene crystalline films. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码：2534 / 2539
页数：6
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