Side-Use of a Ge p-i-n Photo Diode for Electrical Application in a Photonic BiCMOS Technology

被引：0

作者：

Lischke, S. ^{[1
]}

Knoll, D. ^{[1
]}

Tolunay-Wipf, S. ^{[1
]}

Wipf, C. ^{[1
]}

Mai, C. ^{[1
]}

Fox, A. ^{[1
]}

Herzel, F. ^{[1
]}

Kaynak, M. ^{[1
]}

机构：

[1] HIP, Technol Pk 25, D-15236 Frankfurt, Oder, Germany

来源：

2016 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM) | 2016年

关键词：

BiCMOS; Ge p-i-n diode; Silicon photonics;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we demonstrate the potential use of a germanium p-i-n diode, available without additional processing effort in a photonic BiCMOS technology, for electronic applications. A cut-off frequency above 400 GHz was obtained by S-parameter measurements without any certain design optimization of the diode. The device construction on SOI yields in the isolation of the diode from the substrate. Moreover, the lateral current flow enables low series resistance for the diode. Potential applications are antenna-switching or mixers.

引用

页码：126 / 129

页数：4

共 14 条

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