CMOS-compatible GaN-based devices on 200mm-Si for RF applications: Integration and Performance

被引：67

作者：

Peralagu, U. ^{[1
]}

Alian, A. ^{[1
]}

Putcha, V. ^{[1
]}

Khaled, A. ^{[1
]}

Rodriguez, R. ^{[1
]}

Sibaja-Hernandez, A. ^{[1
]}

Chang, S. ^{[1
,2
,3
]}

Simoen, E. ^{[1
,2
]}

Zhao, S. E. ^{[4
]}

De Jaeger, B. ^{[1
]}

Fleetwood, D. M. ^{[4
]}

Wambacq, P. ^{[1
]}

Zhao, M. ^{[1
]}

Parvais, B. ^{[1
,5
]}

Waldron, N. ^{[1
]}

Collaert, N. ^{[1
]}

机构：

[1] IMEC, Kapeldreef 75, B-3001 Leuven, Belgium

[2] Katholieke Univ Leuven, Leuven, Belgium

[3] Natl Chiao Tung Univ, Hsinchu, Taiwan

[4] Vanderbilt Univ, 221 Kirkland Hall, Nashville, TN 37235 USA

[5] VUB, Brussels, Belgium

来源：

2019 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2019年

关键词：

D O I：

10.1109/iedm19573.2019.8993582

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on Al(Ga,In)N HEMTs, MISHEMTs and MOSFETs integrated on 200 mm Si wafers using Au-free processing in standard Si CMOS tools, and discuss the performance tradeoffs, limitations and solutions. The main highlights of process optimization include low RF transmission loss (0.15 dB/mm at 20 GHz), state-of-the-art contact resistance (Rc) of 0.14 Omega mm for a non-Au, low thermal budget (<600 degrees C) contact scheme and a high vertical breakdown voltage (V-BD) of >300 V (pre and post device processing). We show that MISHEMTs, which feature the highest field effect mobility (mu(FE)), >2000 cm(2)/V.s, and the best 1/f noise performance, have the potential to outperform the other device types in terms of device scalability for high frequency operation.

引用

页数：4

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