Novel transparent conducting oxide:: Anatase Ti1-xNbxO2

被引：71

作者：

Furubayashi, Y ^{[1
]}

Hitosugi, T

Yamamoto, Y

Hirose, Y

Kinoda, G

Inaba, K

Shimada, T

Hasegawa, T

机构：

[1] KAST, Kanagawa, Japan

[2] Univ Tokyo, Dept Chem, Tokyo 153, Japan

[3] Tokyo Inst Technol, Mat & Struct Lab, Tokyo 152, Japan

来源：

THIN SOLID FILMS | 2006年 / 496卷 / 01期

关键词：

transparent conducting oxide; anatase; epitaxial film; resistivity; internal transmittance;

D O I：

10.1016/j.tsf.2005.08.245

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Single-crystalline Ti1-xNbxO2 (x = 0.2) films of 40 nm thickness were deposited on SrTiO3 (100) substrates by the pulsed laser deposition (PLD) technique. X-ray diffraction measurement confirmed epitaxial growth of anatase (001) film. The resistivity of Ti1-xNbxO2 films with x >= 0.03 is 2-3 x 10(-4) Omega cm at room temperature. The carrier density of Ti1-xNbxO2, which is almost proportional to the Nb concentration, can be controlled in a range of 1 x 10(19) to 2 x 10(21) cm(-3). Optical measurements revealed that internal transmittance in the visible and near-infrared region for films with x <= 0.03 was more than 97%. These results demonstrate that the presently developed anatase Ti1-xNxO2 is one of the promising candidates for the practical TCOs. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：157 / 159

页数：3

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