Impact of Water-Assisted Electrochemical Reactions on the OFF-State Degradation of AlGaN/GaN HEMTs

被引：57

作者：

Gao, Feng ^{[1
]}

Tan, Swee Ching ^{[2
]}

del Alamo, Jesus A. ^{[1
]}

Thompson, Carl V. ^{[2
]}

Palacios, Tomas ^{[1
]}

机构：

[1] MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA

[2] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2014年 / 61卷 / 02期

关键词：

AlGaN/GaN HEMTs; electrochemical reactions; moisture; reliability; GAN; RELIABILITY; IONIZATION; VOLTAGE; LEAKAGE;

D O I：

10.1109/TED.2013.2293114

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The origin of structural and electrical degradation in AlGaN/GaN high-electron mobility transistors (HEMTs) under OFF-state stress was systematically studied. Hydroxyl groups (OH-) from the environment and/or adsorbed water on the III-N surface, were found to play an important role in the formation of surface pits during OFF-state electrical stress. The mechanism of this water-related structural degradation is explained by an electrochemical cell formed at the gate edge where gate metal, the III-N surface, and the passivation layer meet. The relationship between structural and electrical degradation in AlGaN/GaN HEMTs under OFF-state stress is discussed. Specifically, the permanent decrease in the drain current is directly linked with the formation of the surface pits, while the permanent increase in the gate current is found to be uncorrelated with the structural degradation.

引用

页码：437 / 444

页数：8

共 34 条

[1]

Bougrov V, 2001, PROPERTIES OF ADVANCED SEMICONDUCTOR MATERIALS: GAN, AIN, INN, BN, SIC, SIGE, P1

[2] Impact ionization in high performance AlGaN/GaN HEMTs [J].

Brar, B ;

Boutros, K ;

DeWames, RE ;

Tilak, V ;

Shealy, R ;

Eastman, L .

IEEE LESTER EASTMAN CONFERENCE ON HIGH PERFORMANCE DEVICES, PROCEEDINGS, 2002, :487-491

[3] Electron initiated impact ionization in AlGaN alloys [J].

Bulutay, C .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2002, 17 (10) :L59-L62

[4] Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements [J].

Chini, A. ;

Esposto, M. ;

Meneghesso, G. ;

Zanoni, E. .

ELECTRONICS LETTERS, 2009, 45 (08) :426-U61

[5]

Christiansen B. D., 2011, P IEEE IRPS APR

[6] GaN HEMT reliability [J].

del Alamo, J. A. ;

Joh, J. .

MICROELECTRONICS RELIABILITY, 2009, 49 (9-11) :1200-1206

[7] Role of oxygen in the OFF-state degradation of AlGaN/GaN high electron mobility transistors [J].

Gao, Feng ;

Lu, Bin ;

Li, Libing ;

Kaun, Stephen ;

Speck, James S. ;

Thompson, Carl V. ;

Palacios, Tomas .

APPLIED PHYSICS LETTERS, 2011, 99 (22)

[8] The interaction of water with solid surfaces: fundamental aspects revisited [J].

Henderson, MA .

SURFACE SCIENCE REPORTS, 2002, 46 (1-8) :1-308

[9] Corrosion-induced degradation of GaAs PHEMTs under operation in high humidity conditions [J].

Hisaka, Takayuki ;

Sasaki, Hajime ;

Nogami, Yoichi ;

Hosogi, Kenji ;

Yoshida, Naohito ;

Villanueva, A. A. ;

del Alamo, Jesus A. ;

Hasegawa, Shigehiko ;

Asahi, Hajime .

MICROELECTRONICS RELIABILITY, 2009, 49 (12) :1515-1519

[10] A NEW RECOMBINATION MODEL FOR DEVICE SIMULATION INCLUDING TUNNELING [J].

HURKX, GAM ;

KLAASSEN, DBM ;

KNUVERS, MPG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (02) :331-338

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