Single-photon emission from isolated monolayer islands of InGaN

被引:23
作者
Sun, Xiaoxiao [1 ,2 ]
Wang, Ping [1 ,2 ,3 ]
Wang, Tao [4 ]
Chen, Ling [1 ,2 ]
Chen, Zhaoying [1 ,2 ]
Gao, Kang [5 ]
Aoki, Tomoyuki [5 ]
Li, Mo [6 ]
Zhang, Jian [6 ]
Schulz, Tobias [7 ]
Albrecht, Martin [7 ]
Ge, Weikun [1 ,2 ]
Arakawa, Yasuhiko [5 ]
Shen, Bo [1 ,2 ,3 ]
Holmes, Mark [5 ,8 ]
Wang, Xinqiang [1 ,2 ,3 ]
机构
[1] Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China
[2] Peking Univ, Sch Phys, Frontiers Sci Ctr Nanooptoelect, Beijing 100871, Peoples R China
[3] Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China
[4] Peking Univ, Sch Phys, Electron Microscopy Lab, Beijing 100871, Peoples R China
[5] Univ Tokyo, Inst Nano Quantum Informat Elect, Meguro Ku, 4-6-1 Komaba, Tokyo 1538505, Japan
[6] Univ Elect Sci & Technol China, Sch Elect Sci & Engn, Chengdu 611731, Peoples R China
[7] Leibniz Inst Crystal Growth, Max Born Str 2, D-12489 Berlin, Germany
[8] Univ Tokyo, Inst Ind Sci, Meguro Ku, 4-6-1 Komaba, Tokyo 1538505, Japan
基金
国家重点研发计划; 日本学术振兴会; 中国国家自然科学基金;
关键词
QUANTUM DOTS; EMITTERS;
D O I
10.1038/s41377-020-00393-6
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We identify and characterize a novel type of quantum emitter formed from InGaN monolayer islands grown using molecular beam epitaxy and further isolated via the fabrication of an array of nanopillar structures. Detailed optical analysis of the characteristic emission spectrum from the monolayer islands is performed, and the main transmission is shown to act as a bright, stable, and fast single-photon emitter with a wavelength of similar to 400 nm.
引用
收藏
页数:7
相关论文
共 48 条
[1]  
Aharonovich I, 2016, NAT PHOTONICS, V10, P631, DOI [10.1038/nphoton.2016.186, 10.1038/NPHOTON.2016.186]
[2]  
[Anonymous], 2019, QUANTUM ENG
[3]   Ultraclean Single Photon Emission from a GaN Quantum Dot [J].
Arita, Munetaka ;
Le Roux, Florian ;
Holmes, Mark J. ;
Kako, Satoshi ;
Arakawa, Yasuhiko .
NANO LETTERS, 2017, 17 (05) :2902-2907
[4]   Bright Room-Temperature Single-Photon Emission from Defects in Gallium Nitride [J].
Berhane, Amanuel M. ;
Jeong, Kwang-Yong ;
Bodrog, Zoltan ;
Fiedler, Saskia ;
Schroder, Tim ;
Trivino, Noelia Vico ;
Palacios, Tomas ;
Gali, Adam ;
Toth, Milos ;
Englund, Dirk ;
Aharonovich, Igor .
ADVANCED MATERIALS, 2017, 29 (12)
[5]   Electrically driven polarized single-photon emission from an InGaN quantum dot in a GaN nanowire [J].
Deshpande, Saniya ;
Heo, Junseok ;
Das, Ayan ;
Bhattacharya, Pallab .
NATURE COMMUNICATIONS, 2013, 4
[6]   Emission of Linearly Polarized Single Photons from Quantum Dots Contained in Nonpolar, Semipolar, and Polar Sections of Pencil-Like InGaN/GaN Nanowires [J].
Gacevic, Zarko ;
Holmes, Mark ;
Chernysheva, Ekaterina ;
Mueller, Marcus ;
Torres-Pardo, Almundena ;
Veit, Peter ;
Bertrem, Frank ;
Christen, Juergen ;
Calbet, Jose Maria Gonzalez ;
Arakawa, Yasuhiko ;
Calleja, Enrique ;
Lazic, Snezana .
ACS PHOTONICS, 2017, 4 (03) :657-664
[7]   Tunable and high-purity room temperature single-photon emission from atomic defects in hexagonal boron nitride [J].
Grosso, Gabriele ;
Moon, Hyowon ;
Lienhard, Benjamin ;
Ali, Sajid ;
Efetov, Dmitri K. ;
Furchi, Marco M. ;
Jarillo-Herrero, Pablo ;
Ford, Michael J. ;
Aharonovich, Igor ;
Englund, Dirk .
NATURE COMMUNICATIONS, 2017, 8
[8]   Existence of a phonon bottleneck for excitons in quantum dots [J].
Heitz, R ;
Born, H ;
Guffarth, F ;
Stier, O ;
Schliwa, A ;
Hoffmann, A ;
Bimberg, D .
PHYSICAL REVIEW B, 2001, 64 (24)
[9]   Electron-phonon coupling in a delta-doped n-i-p structure in GaAs [J].
Henning, JCM ;
deGroote, FPJ ;
vanderVleuten, WC ;
Wolter, JH .
PHYSICAL REVIEW B, 1996, 53 (23) :15802-15809
[10]   Spectral diffusion and its influence on the emission linewidths of site-controlled GaN nanowire quantum dots [J].
Holmes, M. ;
Kako, S. ;
Choi, K. ;
Arita, M. ;
Arakawa, Y. .
PHYSICAL REVIEW B, 2015, 92 (11)