Unified Analytical Model for SOI LDMOS With Electric Field Modulation

被引：8
作者：
Duan, Baoxing [1 ]
Xing, Jingyu [1 ]
Dong, Ziming [1 ]
Yang, Yintang [1 ]
机构：
[1] Xidian Univ, Key Lab, Minist Educ Wide Band Gap Semicond Mat & Devices, Sch Microelect, Xian 710071, Peoples R China
来源：
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2020年 / 8卷 / 08期
关键词：
Analytical model; SOI LDMOS; electric field modulation effect; Poisson equation; surface electric field; RESURF; LAYER;
D O I：
10.1109/JEDS.2020.3006293
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The unified analytical model is proposed for SOI LDMOS (Silicon On Insulator Lateral Double-diffused Metal Oxide Semiconductor) based on the electric field modulation in this paper for the first time. The analytical solutions of the surface electric field distributions and potential distributions are derived on the basis of the 2-D Poisson equation. The variation of the buried layer parameters modulates the surface electric field by the electric field modulation effect to optimize the surface electric field distribution of the device. Also, the simulation results obtained through the simulation software ISE are consistent with the expected results of the analytical model. This not only proves the feasibility of the electric field modulation theory, but also shows that the accurate analytical model will be of great guiding significance for designing and optimizing the same LDMOS based on SOI structures.
引用
收藏
页码：686 / 694
页数：9
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