A Simple Output Impedance Model for Doherty Peaking Sub-Amplifiers Biased in Class C

被引:0
|
作者
Holmes, Damon G. [1 ]
机构
[1] Freescale Semicond Inc, Tempe, AZ 85284 USA
来源
2013 IEEE TOPICAL CONFERENCE ON POWER AMPLIFIERS FOR WIRELESS AND RADIO APPLICATIONS (PAWR) | 2013年
关键词
broadband; Class C; Doherty amplifier; off-state; output impedance; power amplifier; POWER-AMPLIFIER; EFFICIENCY;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A simple model of the Doherty peaking sub-amplifier is proposed that approximates the frequency-dependant behavior of its output impedance as seen at the reference plane of the carrier-peaking combining node. The analytical model is useful in that it shows the degradation of the output impedance over frequency as a function of fundamental device and network properties: device output capacitance, transformation ratio, and network delay. The model provides significant insight into the behavior and theoretical upper limit of output impedance when the sub-amplifier is disengaged and provides a benchmark for which to compare practical results for broadband Doherty amplifier designs. By augmenting the model with subthreshold drain-to-source resistance, excellent agreement is shown between the model and experimental results over frequency.
引用
收藏
页码:70 / 72
页数:3
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