The 2018 GaN power electronics roadmap

被引：1001

作者：

Amano, H. ^{[1
]}

Baines, Y. ^{[2
]}

Beam, E. ^{[3
]}

Borga, Matteo ^{[4
]}

Bouchet, T. ^{[2
]}

Chalker, Paul R. ^{[5
]}

Charles, M. ^{[2
]}

Chen, Kevin J. ^{[6
]}

Chowdhury, Nadim ^{[7
]}

Chu, Rongming ^{[8
]}

De Santi, Carlo ^{[4
]}

De Souza, Maria Merlyne ^{[9
]}

Decoutere, Stefaan ^{[10
]}

Di Cioccio, L. ^{[2
]}

Eckardt, Bernd ^{[11
]}

Egawa, Takashi ^{[12
,13
]}

Fay, P. ^{[14
]}

Freedsman, Joseph J. ^{[12
]}

Guido, L. ^{[15
]}

Haeberlen, Oliver ^{[16
]}

Haynes, Geoff ^{[17
]}

Heckel, Thomas ^{[11
]}

Hemakumara, Dilini ^{[18
]}

Houston, Peter ^{[9
]}

Hu, Jie ^{[7
]}

Hua, Mengyuan ^{[6
]}

Huang, Qingyun ^{[19
]}

Huang, Alex ^{[19
]}

Jiang, Sheng ^{[9
]}

Kawai, H. ^{[20
]}

Kinzer, Dan ^{[21
]}

Kuball, Martin ^{[22
]}

Kumar, Ashwani ^{[9
]}

Lee, Kean Boon ^{[9
]}

Li, Xu

Marcon, Denis ^{[10
]}

Maerz, Martin ^{[11
]}

McCarthy, R. ^{[23
]}

Meneghesso, Gaudenzio ^{[4
]}

Meneghini, Matteo ^{[4
]}

Morvan, E. ^{[2
]}

Nakajima, A. ^{[24
]}

Narayanan, E. M. S. ^{[9
]}

Oliver, Stephen ^{[21
]}

Palacios, Tomas ^{[7
]}

Piedra, Daniel ^{[7
]}

Plissonnier, M. ^{[2
]}

Reddy, R. ^{[23
]}

Sun, Min ^{[7
]}

Thayne, Iain ^{[18
]}

机构：

[1] Nagoya Univ, Chikusa Ku, Nagoya, Aichi 4648601, Japan

[2] Univ Grenoble Alpes, LETI, CEA, Grenoble, France

[3] Qorvo Inc, Richardson, TX USA

[4] Univ Padua, Dept Informat Engn, Padua, Italy

[5] Univ Liverpool, Sch Engn, Liverpool, Merseyside, England

[6] Hong Kong Univ Sci & Technol, Hong Kong, Peoples R China

[7] MIT, Dept Elect Engn & Comp Sci, 77 Massachusetts Ave, Cambridge, MA 02139 USA

[8] HRL Labs, Malibu, CA USA

[9] Univ Sheffield, Dept Elect & Elect Engn, Mappin St, Sheffield S1 3JD, S Yorkshire, England

[10] IMEC, Kapeldreef 75, B-3001 Leuven, Belgium

[11] IISB, Fraunhofer Inst Integrated Syst & Device Technol, Schottkystr 10, D-91058 Erlangen, Germany

[12] Nagoya Inst Technol, Res Ctr Nanodevices & Adv Mat, Nagoya, Aichi 4668555, Japan

[13] Nagoya Inst Technol, Innovat Ctr Multibusiness Nitride Semicond, Nagoya, Aichi 4668555, Japan

[14] Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA

[15] Virginia Tech, Dept Elect & Comp Engn, Mat Sci & Engn, Blacksburg, VA USA

[16] Infineon Technol Austria AG, Siemensstr 2, A-9500 Villach, Austria

[17] Inspirit Ventures Ltd, Blandford Forum, England

[18] Univ Glasgow, James Watt Nanofabricat Ctr, Glasgow, Lanark, Scotland

[19] Univ Texas Austin, Dept Elect & Comp Engn, Austin, TX 78712 USA

[20] Powdec KK, 1-23-15 Wakagi Cho, Oyama City, Tochigi 3230028, Japan

[21] Navitas Semicond, El Segundo, CA USA

[22] Univ Bristol, Ctr Device Thermog & Reliabil, Bristol, Avon, England

[23] MicroLink Devices Inc, Niles, IL USA

[24] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki, Japan

[25] Univ Cambridge, Cambridge Ctr GaN, Cambridge, England

[26] Univ Cardiff, Ctr High Frequency Engn, Cardiff, S Glam, Wales

[27] Zhejiang Univ, Hangzhou, Zhejiang, Peoples R China

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2018年 / 51卷 / 16期

基金：

英国工程与自然科学研究理事会;

关键词：

GaN; power circuits; GaN-on-Si; ALGAN/GAN HEMTS; BREAKDOWN VOLTAGE; THRESHOLD VOLTAGE; SI; GATE; FIELD; MODE; TRANSISTORS; SUBSTRATE; MIS;

D O I：

10.1088/1361-6463/aaaf9d

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to facilitate economic growth in a semiconductor industry that is silicon-based and currently faced with diminishing returns of performance versus cost of investment. At a material level, its high electric field strength and electron mobility have already shown tremendous potential for high frequency communications and photonic applications. Advances in growth on commercially viable large area substrates are now at the point where power conversion applications of GaN are at the cusp of commercialisation. The future for building on the work described here in ways driven by specific challenges emerging from entirely new markets and applications is very exciting. This collection of GaN technology developments is therefore not itself a road map but a valuable collection of global state-of-the-art GaN research that will inform the next phase of the technology as market driven requirements evolve. First generation production devices are igniting large new markets and applications that can only be achieved using the advantages of higher speed, low specific resistivity and low saturation switching transistors. Major investments are being made by industrial companies in a wide variety of markets exploring the use of the technology in new circuit topologies, packaging solutions and system architectures that are required to achieve and optimise the system advantages offered by GaN transistors. It is this momentum that will drive priorities for the next stages of device research gathered here.

引用

页数：48

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