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- [1] Toward the Ultimate Limit of Phase Change in Ge2Sb2Te5NANO LETTERS, 2010, 10 (02) : 414 - 419Simpson, R. E.论文数: 0 引用数: 0 h-index: 0机构: Natl Inst Appl Ind Sci & Technol, Ctr Appl Near Field Opt Res, Tsukuba, Ibaraki 3058562, Japan Natl Inst Appl Ind Sci & Technol, Ctr Appl Near Field Opt Res, Tsukuba, Ibaraki 3058562, JapanKrbal, M.论文数: 0 引用数: 0 h-index: 0机构: Natl Inst Appl Ind Sci & Technol, Ctr Appl Near Field Opt Res, Tsukuba, Ibaraki 3058562, Japan Natl Inst Appl Ind Sci & Technol, Ctr Appl Near Field Opt Res, Tsukuba, Ibaraki 3058562, JapanFons, P.论文数: 0 引用数: 0 h-index: 0机构: Natl Inst Appl Ind Sci & Technol, Ctr Appl Near Field Opt Res, Tsukuba, Ibaraki 3058562, Japan SPring 8, JASRI, Mikazuki, Hyogo 6795198, Japan Natl Inst Appl Ind Sci & Technol, Ctr Appl Near Field Opt Res, Tsukuba, Ibaraki 3058562, JapanKolobov, A. V.论文数: 0 引用数: 0 h-index: 0机构: Natl Inst Appl Ind Sci & Technol, Ctr Appl Near Field Opt Res, Tsukuba, Ibaraki 3058562, Japan SPring 8, JASRI, Mikazuki, Hyogo 6795198, Japan Natl Inst Appl Ind Sci & Technol, Ctr Appl Near Field Opt Res, Tsukuba, Ibaraki 3058562, JapanTominaga, J.论文数: 0 引用数: 0 h-index: 0机构: Natl Inst Appl Ind Sci & Technol, Ctr Appl Near Field Opt Res, Tsukuba, Ibaraki 3058562, Japan Natl Inst Appl Ind Sci & Technol, Ctr Appl Near Field Opt Res, Tsukuba, Ibaraki 3058562, JapanUruga, T.论文数: 0 引用数: 0 h-index: 0机构: SPring 8, JASRI, Mikazuki, Hyogo 6795198, Japan Natl Inst Appl Ind Sci & Technol, Ctr Appl Near Field Opt Res, Tsukuba, Ibaraki 3058562, JapanTanida, H.论文数: 0 引用数: 0 h-index: 0机构: SPring 8, JASRI, Mikazuki, Hyogo 6795198, Japan Natl Inst Appl Ind Sci & Technol, Ctr Appl Near Field Opt Res, Tsukuba, Ibaraki 3058562, Japan
- [2] A layered Ge2Sb2Te5 phase change materialNANOSCALE, 2020, 12 (05) : 3351 - 3358Zhang, Bo论文数: 0 引用数: 0 h-index: 0机构: Univ Pardubice, Fac Chem Technol, Dept Gen & Inorgan Chem, Studentska 573, Pardubice 53210, Czech Republic Univ Pardubice, Fac Chem Technol, Dept Gen & Inorgan Chem, Studentska 573, Pardubice 53210, Czech RepublicCicmancova, Veronika论文数: 0 引用数: 0 h-index: 0机构: Univ Pardubice, Fac Chem Technol, Ctr Mat & Nanotechnol, Nam Cs Legii 565, Pardubice 53002, Czech Republic Univ Pardubice, Fac Chem Technol, Dept Gen & Inorgan Chem, Studentska 573, Pardubice 53210, Czech RepublicKupcik, Jaroslav论文数: 0 引用数: 0 h-index: 0机构: ASCR, Inst Inorgan Chem, Husinec Rez 25068, Czech Republic Univ Pardubice, Fac Chem Technol, Dept Gen & Inorgan Chem, Studentska 573, Pardubice 53210, Czech RepublicSlang, Stanislav论文数: 0 引用数: 0 h-index: 0机构: Univ Pardubice, Fac Chem Technol, Ctr Mat & Nanotechnol, Nam Cs Legii 565, Pardubice 53002, Czech Republic Univ Pardubice, Fac Chem Technol, Dept Gen & Inorgan Chem, Studentska 573, Pardubice 53210, Czech RepublicPereira, Jhonatan Rodriguez论文数: 0 引用数: 0 h-index: 0机构: Univ Pardubice, Fac Chem Technol, Ctr Mat & Nanotechnol, Nam Cs Legii 565, Pardubice 53002, Czech Republic Univ Pardubice, Fac Chem Technol, Dept Gen & Inorgan Chem, Studentska 573, Pardubice 53210, Czech RepublicSvoboda, Roman论文数: 0 引用数: 0 h-index: 0机构: Univ Pardubice, Fac Chem Technol, Dept Phys Chem, Studentska 573, Pardubice 53210, Czech Republic Univ Pardubice, Fac Chem Technol, Dept Gen & Inorgan Chem, Studentska 573, Pardubice 53210, Czech RepublicKutalek, Petr论文数: 0 引用数: 0 h-index: 0机构: Univ Pardubice, Joint Lab Solid State Chem, Studentska 84, Pardubice 53210, Czech Republic Univ Pardubice, Fac Chem Technol, Dept Gen & Inorgan Chem, Studentska 573, Pardubice 53210, Czech RepublicWagner, Tomas论文数: 0 引用数: 0 h-index: 0机构: Univ Pardubice, Fac Chem Technol, Dept Gen & Inorgan Chem, Studentska 573, Pardubice 53210, Czech Republic Univ Pardubice, Fac Chem Technol, Ctr Mat & Nanotechnol, Nam Cs Legii 565, Pardubice 53002, Czech Republic Univ Pardubice, Fac Chem Technol, Dept Gen & Inorgan Chem, Studentska 573, Pardubice 53210, Czech Republic
- [3] Thermal effect of Ge2Sb2Te5 in phase change memory deviceCHINESE PHYSICS B, 2014, 23 (08)Li Jun-Tao论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China Univ Chinese Acad Sci, Beijing 100049, Peoples R China Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R ChinaLiu Bo论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R ChinaSong Zhi-Tang论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R ChinaRen Kun论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China Univ Chinese Acad Sci, Beijing 100049, Peoples R China Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R ChinaZhu Min论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China Univ Chinese Acad Sci, Beijing 100049, Peoples R China Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R ChinaXu Jia论文数: 0 引用数: 0 h-index: 0机构: Semicond Mfg Int Corp, Shanghai 201203, Peoples R China Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R ChinaRen Jia-Dong论文数: 0 引用数: 0 h-index: 0机构: Semicond Mfg Int Corp, Shanghai 201203, Peoples R China Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R ChinaFeng Gao-Ming论文数: 0 引用数: 0 h-index: 0机构: Semicond Mfg Int Corp, Shanghai 201203, Peoples R China Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R ChinaRen Wan-Chun论文数: 0 引用数: 0 h-index: 0机构: Semicond Mfg Int Corp, Shanghai 201203, Peoples R China Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R ChinaTong Hao论文数: 0 引用数: 0 h-index: 0机构: Semicond Mfg Int Corp, Shanghai 201203, Peoples R China Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
- [4] Phase change behavior in oxygen-incorporated Ge2Sb2Te5 filmsAPPLIED PHYSICS LETTERS, 2009, 95 (01)Jang, M. H.论文数: 0 引用数: 0 h-index: 0机构: Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South KoreaPark, S. J.论文数: 0 引用数: 0 h-index: 0机构: Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South KoreaLim, D. H.论文数: 0 引用数: 0 h-index: 0机构: Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South KoreaCho, M. -H.论文数: 0 引用数: 0 h-index: 0机构: Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South KoreaDo, K. H.论文数: 0 引用数: 0 h-index: 0机构: Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South KoreaKo, D. -H.论文数: 0 引用数: 0 h-index: 0机构: Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South KoreaSohn, H. C.论文数: 0 引用数: 0 h-index: 0机构: Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea
- [5] Study on the crystallization behavior of Ge2Sb2Te5 and silicon doped Ge2Sb2Te5 filmsADVANCED ENGINEERING MATERIALS III, PTS 1-3, 2013, 750-752 : 1044 - +Jiang, Yifan论文数: 0 引用数: 0 h-index: 0机构: Nanjing Univ, Natl Lab Solid State Microstruct, Sch Elect Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China Nanjing Univ, Natl Lab Solid State Microstruct, Sch Elect Sci & Engn, Nanjing 210093, Jiangsu, Peoples R ChinaXu, Ling论文数: 0 引用数: 0 h-index: 0机构: Nanjing Univ, Natl Lab Solid State Microstruct, Sch Elect Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China Nanjing Univ, Natl Lab Solid State Microstruct, Sch Elect Sci & Engn, Nanjing 210093, Jiangsu, Peoples R ChinaChen, Jing论文数: 0 引用数: 0 h-index: 0机构: Nanjing Univ, Natl Lab Solid State Microstruct, Sch Elect Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China Nanjing Univ, Natl Lab Solid State Microstruct, Sch Elect Sci & Engn, Nanjing 210093, Jiangsu, Peoples R ChinaZhang, Rui论文数: 0 引用数: 0 h-index: 0机构: Nanjing Univ, Natl Lab Solid State Microstruct, Sch Elect Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China Nanjing Univ, Natl Lab Solid State Microstruct, Sch Elect Sci & Engn, Nanjing 210093, Jiangsu, Peoples R ChinaSu, Weining论文数: 0 引用数: 0 h-index: 0机构: Nanjing Univ, Sch Phys, Natl Lab Solid State Microstruct, Nanjing, Peoples R China Nanjing Univ, Natl Lab Solid State Microstruct, Sch Elect Sci & Engn, Nanjing 210093, Jiangsu, Peoples R ChinaYu, Yao论文数: 0 引用数: 0 h-index: 0机构: Nanjing Univ, Sch Phys, Natl Lab Solid State Microstruct, Nanjing, Peoples R China Nanjing Univ, Natl Lab Solid State Microstruct, Sch Elect Sci & Engn, Nanjing 210093, Jiangsu, Peoples R ChinaMa, Zhongyuan论文数: 0 引用数: 0 h-index: 0机构: Nanjing Univ, Natl Lab Solid State Microstruct, Sch Elect Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China Nanjing Univ, Natl Lab Solid State Microstruct, Sch Elect Sci & Engn, Nanjing 210093, Jiangsu, Peoples R ChinaXu, Jun论文数: 0 引用数: 0 h-index: 0机构: Nanjing Univ, Natl Lab Solid State Microstruct, Sch Elect Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China Nanjing Univ, Natl Lab Solid State Microstruct, Sch Elect Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China
- [6] Improvement of phase change behavior in titanium-doped Ge2Sb2Te5 filmsJOURNAL OF INFRARED AND MILLIMETER WAVES, 2015, 34 (06) : 658 - 662Zhang Ying论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Dept Opt Sci & Engn, Shanghai 200433, Peoples R China Fudan Univ, Dept Opt Sci & Engn, Shanghai 200433, Peoples R ChinaWei Shen-Jin论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Dept Opt Sci & Engn, Shanghai 200433, Peoples R China Fudan Univ, Dept Opt Sci & Engn, Shanghai 200433, Peoples R ChinaYi Xin-Yu论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Dept Opt Sci & Engn, Shanghai 200433, Peoples R China Fudan Univ, Dept Opt Sci & Engn, Shanghai 200433, Peoples R ChinaCheng Shuai论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Dept Opt Sci & Engn, Shanghai 200433, Peoples R China Fudan Univ, Dept Opt Sci & Engn, Shanghai 200433, Peoples R ChinaChen Kun论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Dept Opt Sci & Engn, Shanghai 200433, Peoples R China Fudan Univ, Dept Opt Sci & Engn, Shanghai 200433, Peoples R ChinaZhu Huan-Feng论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Dept Opt Sci & Engn, Shanghai 200433, Peoples R China Fudan Univ, Dept Opt Sci & Engn, Shanghai 200433, Peoples R ChinaLi Jing论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Dept Opt Sci & Engn, Shanghai 200433, Peoples R China Fudan Univ, Shanghai Engn Res Ctr Ultra Precis Opt Mfg, Shanghai 200433, Peoples R China Fudan Univ, Key Lab Micro & Nano Photon Struct, Minist Educ, Shanghai 200433, Peoples R China Fudan Univ, Dept Opt Sci & Engn, Shanghai 200433, Peoples R ChinaLv Lei论文数: 0 引用数: 0 h-index: 0机构: Weifang Med Univ, Dept Med Phys, Weifang 261053, Peoples R China Fudan Univ, Dept Opt Sci & Engn, Shanghai 200433, Peoples R China
- [7] Effect of Sb2Se on phase change characteristics of Ge2Sb2Te5CRYSTENGCOMM, 2015, 17 (26): : 4871 - 4876Wang, Miao论文数: 0 引用数: 0 h-index: 0机构: Ningbo Univ, Fac Informat Sci & Engn, Ningbo 315211, Zhejiang, Peoples R China Ningbo Univ, Fac Informat Sci & Engn, Ningbo 315211, Zhejiang, Peoples R ChinaLu, Yegang论文数: 0 引用数: 0 h-index: 0机构: Ningbo Univ, Fac Informat Sci & Engn, Ningbo 315211, Zhejiang, Peoples R China Ningbo Univ, Fac Informat Sci & Engn, Ningbo 315211, Zhejiang, Peoples R ChinaShen, Xiang论文数: 0 引用数: 0 h-index: 0机构: Ningbo Univ, Lab Infrared Mat & Devices, Adv Technol Res Inst, Ningbo 315211, Zhejiang, Peoples R China Ningbo Univ, Fac Informat Sci & Engn, Ningbo 315211, Zhejiang, Peoples R ChinaWang, Guoxiang论文数: 0 引用数: 0 h-index: 0机构: Ningbo Univ, Lab Infrared Mat & Devices, Adv Technol Res Inst, Ningbo 315211, Zhejiang, Peoples R China Ningbo Univ, Fac Informat Sci & Engn, Ningbo 315211, Zhejiang, Peoples R ChinaLi, Jun论文数: 0 引用数: 0 h-index: 0机构: Ningbo Univ, Fac Informat Sci & Engn, Ningbo 315211, Zhejiang, Peoples R China Ningbo Univ, Fac Informat Sci & Engn, Ningbo 315211, Zhejiang, Peoples R ChinaDai, Shixun论文数: 0 引用数: 0 h-index: 0机构: Ningbo Univ, Lab Infrared Mat & Devices, Adv Technol Res Inst, Ningbo 315211, Zhejiang, Peoples R China Ningbo Univ, Fac Informat Sci & Engn, Ningbo 315211, Zhejiang, Peoples R ChinaSong, Sannian论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China Ningbo Univ, Fac Informat Sci & Engn, Ningbo 315211, Zhejiang, Peoples R ChinaSong, Zhitang论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China Ningbo Univ, Fac Informat Sci & Engn, Ningbo 315211, Zhejiang, Peoples R China
- [8] Thermal effect of Ge2Sb2Te5 in phase change memory deviceChinese Physics B, 2014, 23 (08) : 125 - 128论文数: 引用数: h-index:机构:论文数: 引用数: h-index:机构:论文数: 引用数: h-index:机构:论文数: 引用数: h-index:机构:论文数: 引用数: h-index:机构:论文数: 引用数: h-index:机构:任佳栋论文数: 0 引用数: 0 h-index: 0机构: Semiconductor Manufacturing International Corporation State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences冯高明论文数: 0 引用数: 0 h-index: 0机构: Semiconductor Manufacturing International Corporation State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences任万春论文数: 0 引用数: 0 h-index: 0机构: Semiconductor Manufacturing International Corporation State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences论文数: 引用数: h-index:机构:
- [9] Failure Analysis of Ge2Sb2Te5 Based Phase Change MemoryJAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (05) : 3372 - 3375Hong, Sung-Hoon论文数: 0 引用数: 0 h-index: 0机构: Korea Univ, Div Mat Sci & Engn, Seoul 136701, South Korea Korea Univ, Div Mat Sci & Engn, Seoul 136701, South Korea论文数: 引用数: h-index:机构:
- [10] Structure and the mechanism of rapid phase change in amorphous Ge2Sb2Te5PHYSICS AND CHEMISTRY OF GLASSES-EUROPEAN JOURNAL OF GLASS SCIENCE AND TECHNOLOGY PART B, 2009, 50 (03): : 205 - 211Takata, M.论文数: 0 引用数: 0 h-index: 0机构: RIKEN, SPring 8 Ctr, Sayo, Hyogo 6795148, Japan RIKEN, SPring 8 Ctr, Sayo, Hyogo 6795148, JapanTanaka, Y.论文数: 0 引用数: 0 h-index: 0机构: RIKEN, SPring 8 Ctr, Sayo, Hyogo 6795148, Japan RIKEN, SPring 8 Ctr, Sayo, Hyogo 6795148, JapanKato, K.论文数: 0 引用数: 0 h-index: 0机构: RIKEN, SPring 8 Ctr, Sayo, Hyogo 6795148, Japan RIKEN, SPring 8 Ctr, Sayo, Hyogo 6795148, JapanYoshida, F.论文数: 0 引用数: 0 h-index: 0机构: RIKEN, SPring 8 Ctr, Sayo, Hyogo 6795148, Japan RIKEN, SPring 8 Ctr, Sayo, Hyogo 6795148, JapanFukuyama, Y.论文数: 0 引用数: 0 h-index: 0机构: Japan Synchrotron Radiat Res Inst, SPring 8, Sayo, Hyogo 6795198, Japan RIKEN, SPring 8 Ctr, Sayo, Hyogo 6795148, JapanYasuda, N.论文数: 0 引用数: 0 h-index: 0机构: Japan Synchrotron Radiat Res Inst, SPring 8, Sayo, Hyogo 6795198, Japan RIKEN, SPring 8 Ctr, Sayo, Hyogo 6795148, JapanKohara, S.论文数: 0 引用数: 0 h-index: 0机构: Japan Synchrotron Radiat Res Inst, SPring 8, Sayo, Hyogo 6795198, Japan RIKEN, SPring 8 Ctr, Sayo, Hyogo 6795148, JapanOsawa, H.论文数: 0 引用数: 0 h-index: 0机构: Japan Synchrotron Radiat Res Inst, SPring 8, Sayo, Hyogo 6795198, Japan RIKEN, SPring 8 Ctr, Sayo, Hyogo 6795148, JapanNakagawa, T.论文数: 0 引用数: 0 h-index: 0机构: Japan Synchrotron Radiat Res Inst, SPring 8, Sayo, Hyogo 6795198, Japan RIKEN, SPring 8 Ctr, Sayo, Hyogo 6795148, JapanKim, J.论文数: 0 引用数: 0 h-index: 0机构: Japan Synchrotron Radiat Res Inst, SPring 8, Sayo, Hyogo 6795198, Japan RIKEN, SPring 8 Ctr, Sayo, Hyogo 6795148, JapanMurayama, H.论文数: 0 引用数: 0 h-index: 0机构: Japan Synchrotron Radiat Res Inst, SPring 8, Sayo, Hyogo 6795198, Japan RIKEN, SPring 8 Ctr, Sayo, Hyogo 6795148, JapanKimura, S.论文数: 0 引用数: 0 h-index: 0机构: Japan Synchrotron Radiat Res Inst, SPring 8, Sayo, Hyogo 6795198, Japan RIKEN, SPring 8 Ctr, Sayo, Hyogo 6795148, JapanKamioka, H.论文数: 0 引用数: 0 h-index: 0机构: Univ Tsukuba, Grad Sch Pure & Appl Sci, Tsukuba, Ibaraki 3058571, Japan RIKEN, SPring 8 Ctr, Sayo, Hyogo 6795148, JapanMoritomo, Y.论文数: 0 引用数: 0 h-index: 0机构: Univ Tsukuba, Grad Sch Pure & Appl Sci, Tsukuba, Ibaraki 3058571, Japan RIKEN, SPring 8 Ctr, Sayo, Hyogo 6795148, JapanMatsunaga, T.论文数: 0 引用数: 0 h-index: 0机构: Panasonic Corp, Osaka 5708501, Japan RIKEN, SPring 8 Ctr, Sayo, Hyogo 6795148, JapanKojima, R.论文数: 0 引用数: 0 h-index: 0机构: Panasonic Corp, Osaka 5708501, Japan RIKEN, SPring 8 Ctr, Sayo, Hyogo 6795148, JapanYamada, N.论文数: 0 引用数: 0 h-index: 0机构: Panasonic Corp, Osaka 5708501, Japan RIKEN, SPring 8 Ctr, Sayo, Hyogo 6795148, JapanToriumi, K.论文数: 0 引用数: 0 h-index: 0机构: Univ Hyogo, Grad Sch Mat Sci, Kamigori, Hyogo 6781297, Japan RIKEN, SPring 8 Ctr, Sayo, Hyogo 6795148, JapanOhshima, T.论文数: 0 引用数: 0 h-index: 0机构: RIKEN, XFEL Project Head Off, Sayo, Hyogo 6795148, Japan RIKEN, SPring 8 Ctr, Sayo, Hyogo 6795148, JapanTanaka, H.论文数: 0 引用数: 0 h-index: 0机构: RIKEN, XFEL Project Head Off, Sayo, Hyogo 6795148, Japan RIKEN, SPring 8 Ctr, Sayo, Hyogo 6795148, Japan