Phase change behavior and critical size of Ge2Sb2Te5 nanowires and nanotubes

被引:3
|
作者
Bai, Gang [1 ,2 ]
Liu, Zhiguo [1 ,2 ]
Li, Run [2 ,3 ]
Xia, Yidong [1 ,2 ]
Yin, Jiang [1 ,2 ]
机构
[1] Nanjing Univ, Dept Mat Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China
[2] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China
[3] Nanjing Univ, Dept Phys, Nanjing 210093, Jiangsu, Peoples R China
基金
中国国家自然科学基金;
关键词
Phase change memory; Nanoscale; Critical size; Melting; Crystallization; Ge2Sb2Te5; CRYSTAL; GETE;
D O I
10.1016/j.physb.2012.11.018
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The phase change behavior of Ge2Sb2Te5 (GST) nanowires and nanotubes was investigated by using thermodynamic calculations. It is revealed that the melting and crystallization temperatures for both nanowires and nanotubes decrease as the diameter of the nanostructures is reduced. There exists a critical diameter for both nanowires and nanotubes, below which the crystallization could not take place. It determines the ultimate scaling limit of nanowires or nanostructures phase-change memory. The critical diameter for nanowires depends on the difference between the surface energy of solid and liquid phases, the bulk melting and crystallization temperatures, as well as the melting and crystallization entropy. The critical diameter of the nanotubes is larger than that of the nanowires. And it is also dependent on the ratio of outer diameter over inner diameter of the tubes. The lower ratio of outer diameter over inner diameter gives rise to the larger critical diameter of the nanotubes. (c) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码:68 / 71
页数:4
相关论文
共 50 条
  • [1] Toward the Ultimate Limit of Phase Change in Ge2Sb2Te5
    Simpson, R. E.
    Krbal, M.
    Fons, P.
    Kolobov, A. V.
    Tominaga, J.
    Uruga, T.
    Tanida, H.
    NANO LETTERS, 2010, 10 (02) : 414 - 419
  • [2] A layered Ge2Sb2Te5 phase change material
    Zhang, Bo
    Cicmancova, Veronika
    Kupcik, Jaroslav
    Slang, Stanislav
    Pereira, Jhonatan Rodriguez
    Svoboda, Roman
    Kutalek, Petr
    Wagner, Tomas
    NANOSCALE, 2020, 12 (05) : 3351 - 3358
  • [3] Thermal effect of Ge2Sb2Te5 in phase change memory device
    Li Jun-Tao
    Liu Bo
    Song Zhi-Tang
    Ren Kun
    Zhu Min
    Xu Jia
    Ren Jia-Dong
    Feng Gao-Ming
    Ren Wan-Chun
    Tong Hao
    CHINESE PHYSICS B, 2014, 23 (08)
  • [4] Phase change behavior in oxygen-incorporated Ge2Sb2Te5 films
    Jang, M. H.
    Park, S. J.
    Lim, D. H.
    Cho, M. -H.
    Do, K. H.
    Ko, D. -H.
    Sohn, H. C.
    APPLIED PHYSICS LETTERS, 2009, 95 (01)
  • [5] Study on the crystallization behavior of Ge2Sb2Te5 and silicon doped Ge2Sb2Te5 films
    Jiang, Yifan
    Xu, Ling
    Chen, Jing
    Zhang, Rui
    Su, Weining
    Yu, Yao
    Ma, Zhongyuan
    Xu, Jun
    ADVANCED ENGINEERING MATERIALS III, PTS 1-3, 2013, 750-752 : 1044 - +
  • [6] Improvement of phase change behavior in titanium-doped Ge2Sb2Te5 films
    Zhang Ying
    Wei Shen-Jin
    Yi Xin-Yu
    Cheng Shuai
    Chen Kun
    Zhu Huan-Feng
    Li Jing
    Lv Lei
    JOURNAL OF INFRARED AND MILLIMETER WAVES, 2015, 34 (06) : 658 - 662
  • [7] Effect of Sb2Se on phase change characteristics of Ge2Sb2Te5
    Wang, Miao
    Lu, Yegang
    Shen, Xiang
    Wang, Guoxiang
    Li, Jun
    Dai, Shixun
    Song, Sannian
    Song, Zhitang
    CRYSTENGCOMM, 2015, 17 (26): : 4871 - 4876
  • [8] Thermal effect of Ge2Sb2Te5 in phase change memory device
    李俊焘
    刘波
    宋志棠
    任堃
    朱敏
    徐佳
    任佳栋
    冯高明
    任万春
    童浩
    Chinese Physics B, 2014, 23 (08) : 125 - 128
  • [9] Failure Analysis of Ge2Sb2Te5 Based Phase Change Memory
    Hong, Sung-Hoon
    Lee, Heon
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (05) : 3372 - 3375
  • [10] Structure and the mechanism of rapid phase change in amorphous Ge2Sb2Te5
    Takata, M.
    Tanaka, Y.
    Kato, K.
    Yoshida, F.
    Fukuyama, Y.
    Yasuda, N.
    Kohara, S.
    Osawa, H.
    Nakagawa, T.
    Kim, J.
    Murayama, H.
    Kimura, S.
    Kamioka, H.
    Moritomo, Y.
    Matsunaga, T.
    Kojima, R.
    Yamada, N.
    Toriumi, K.
    Ohshima, T.
    Tanaka, H.
    PHYSICS AND CHEMISTRY OF GLASSES-EUROPEAN JOURNAL OF GLASS SCIENCE AND TECHNOLOGY PART B, 2009, 50 (03): : 205 - 211