HIGH TEMPERATURE SENSOR BASED ON SiC SCHOTTKY DIODES WITH UNDOPED OXIDE RAMP TERMINATION

被引：0
作者：
Pascu, R. [1 ]
Draghici, F. [1 ,2 ]
Badila, M. [3 ]
Craciunoiu, F. [1 ]
Brezeanu, G. [2 ]
Dinescu, A. [1 ]
Rusu, I. [2 ]
机构：
[1] IMT Bucharest, Natl Inst Res & Dev Microtechnol, Erou Iancu Nicolae 126A 32B, Bucharest 077190, Romania
[2] Univ Bucharest, Bucharest, Romania
[3] ON Semicond Corp, Phoenix, AZ USA
来源：
2011 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS 2011), 34TH EDITION, VOLS 1 AND 2 | 2011年
关键词：
high temperature sensors; silicon carbide (SiC); oxide ramp termination; packaging;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A simple technology of 4H-SiC Schottky diode with oxide ramp termination is presented. The ramp is controlled by two undoped layers: an annealed (compact) oxide layer and as deposited layer, respectively.
引用
收藏
页码：379 / 382
页数：4
相关论文
共 29 条
  • [1] Comparison between Schottky diodes with oxide ramp termination on silicon carbide and diamond
    Brezeanu, G.
    Brezeanu, M.
    Udrea, F.
    Arnaratunga, G.
    Boianceanu, C.
    Badila, M.
    Zekentes, K.
    Visoreanu, A.
    SILICON CARBIDE AND RELATED MATERIALS 2006, 2007, 556-557 : 865 - +
  • [2] Towards the fabrication and measurement of high sensitivity SiC-UV detectors with oxide ramp termination
    Brezeanu, G
    Godignon, P
    Dimitrova, E
    Raynaud, C
    Planson, D
    Mihaila, A
    Udrea, F
    Milian, J
    Amaratunga, G
    Boianceanu, C
    SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 2004, 457-460 : 1495 - 1498
  • [3] AN INDUSTRIAL TEMPERATURE PROBE BASED ON SiC DIODES
    Draghici, F.
    Badila, M.
    Brezeanu, G.
    Rusu, I.
    Craciunoiu, F.
    Enache, I.
    2010 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), VOLS 1 AND 2, 2010, : 409 - 412
  • [4] Influence of Packaging Processes and Temperature on Characteristics of Schottky Diodes Made of SiC
    Gorecki, Pawel
    Mysliwiec, Marcin
    Gorecki, Krzysztof
    Kisiel, Ryszard
    IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY, 2019, 9 (04): : 633 - 641
  • [5] High temperature LTCC package for SiC-based gas sensor
    Nowak, Damian
    Kulczak, Dariusz
    Januszkiewicz, Maksymilian
    Dziedzic, Andrzej
    OPTICA APPLICATA, 2009, 39 (04) : 701 - 704
  • [6] Ideal Ni-Based 4H-SiC Schottky barrier diodes with Si intercalation
    Gao, Meng-meng
    Fan, Liu-yan
    Chen, Zhi-zhan
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2020, 107
  • [7] The effects of high-dose gamma irradiation on high-voltage 4H-SiC Schottky diodes and the SiC-SiO2 interface
    Sheridan, DC
    Chung, GY
    Clark, S
    Cressler, JD
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2001, 48 (06) : 2229 - 2232
  • [8] Simulation and experimental study on the junction termination structure for high-voltage 4H-SiC PiN diodes
    Hiyoshi, Toru
    Hori, Tsutomu
    Suda, Jun
    Kimoto, Tsunenobu
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (08) : 1841 - 1846
  • [9] Improving the Barrier Height Uniformity of 4H-SiC Schottky Barrier Diodes by Nitric Oxide Post-Oxidation Annealing
    Lee, Dohyun
    Kim, Changhyun
    Lee, Hunhee
    Lee, Suhyeong
    Kang, Hongjeon
    Kim, Hyunwoo
    Park, Hui Kyung
    Heo, Jaeyeong
    Kim, Hyeong Joon
    IEEE ELECTRON DEVICE LETTERS, 2014, 35 (08) : 868 - 870
  • [10] Electrothermal Ruggedness of High Voltage SiC Merged-PiN-Schottky Diodes Under Inductive Avalanche & Surge Current Stress
    Shen, Chengjun
    Jahdi, Saeed
    Yang, Juefei
    Alatise, Olayiwola
    Ortiz-Gonzalez, Jose
    Mellor, Phil
    2022 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2022,
123