Transparent and Flexible Thin-Film Transistors with High Performance Prepared at Ultralow Temperatures by Atomic Layer Deposition

被引:30
作者
Chen, Xue [1 ,2 ]
Zhang, Guozhen [1 ,2 ]
Wan, Jiaxian [1 ,2 ]
Guo, Tao [1 ,2 ]
Li, Lei [1 ,2 ]
Yang, Yanpeng [1 ,2 ]
Wu, Hao [2 ,3 ]
Liu, Chang [1 ,2 ]
机构
[1] Wuhan Univ, Key Lab Artificial Micro & Nano Struct, Minist Educ, Wuhan 430072, Hubei, Peoples R China
[2] Wuhan Univ, Sch Phys & Technol, Wuhan 430072, Hubei, Peoples R China
[3] Wuhan Univ, Hubei Key Lab Nucl Solid Phys, Wuhan 430072, Hubei, Peoples R China
关键词
aluminum; atomic layer deposition; bottom gate/top contacts; oxide; thin-film transistors; zinc oxide; BILAYER STRUCTURE; INSTABILITY; ENHANCEMENT; STABILITY; SILICON; DESIGN; DEVICE;
D O I
10.1002/aelm.201800583
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
High-performance, transparent, and flexible thin-film transistors (TFTs) with polycrystalline channels in a bottom-gate structure are successfully fabricated at extremely low temperatures of 80, 90, and 100 degrees C by atomic layer deposition (ALD) in which ZnO and Al2O3 are used as channels and dielectric layers, respectively. The transistors are superior to silicon-based TFTs in which high temperatures are necessarily involved in both preparation and postgrowth annealing. Among all devices, TFTs grown at 100 degrees C exhibit the best performance which can be attributed to the lowest grain boundary trap density. Additionally, the TFTs are successfully transferred to plastic substrates without any performance degradation, which shows a high mobility of 37.1 cm(2) V-1 s(-1), a high on/off-state current ratio of 10(7) at V-DS = 0.1 V, a small subthreshold swing of 0.38 V dec(-1), and a proper threshold voltage of 1.34 V as well as an excellent bias stability.
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页数:8
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