Fermi-level pinning at conjugated polymer interfaces

被引:305
|
作者
Tengstedt, C [1 ]
Osikowicz, W
Salaneck, WR
Parker, ID
Hsu, CH
Fahlman, M
机构
[1] Linkoping Univ, Dept Sci & Technol, SE-60174 Norrkoping, Sweden
[2] Linkoping Univ, Dept Phys, SE-58183 Linkoping, Sweden
[3] Dupont Displays, Santa Barbara, CA 93117 USA
[4] EI DuPont Nemours & Co, Dupont Displays, Wilmington, DE 19880 USA
关键词
D O I
10.1063/1.2168515
中图分类号
O59 [应用物理学];
学科分类号
摘要
Photoelectron spectroscopy has been used to map out energy level alignment of conjugated polymers at various organic-organic and hybrid interfaces. Specifically, we have investigated the hole-injection interface between the substrate and light-emitting polymer. Two different alignment regimes have been observed: (i) Vacuum-level alignment, which corresponds to the lack of vacuum-level offsets (Schottky-Mott limit) and (ii) Fermi-level pinning, where the substrate Fermi level and the positive polaronic level of the polymer align. The observation is rationalized in terms of spontaneous charge transfer whenever the substrate Fermi level exceeds the positive polaron/bipolaron formation energy per particle. The charge transfer leads to the formation of an interfacial dipole, as large as 2.1 eV. (c) 2006 American Institute of Physics.
引用
收藏
页码:1 / 3
页数:3
相关论文
共 50 条
  • [1] FERMI-LEVEL PINNING BY MISFIT DISLOCATIONS AT GAAS INTERFACES
    WOODALL, JM
    PETTIT, GD
    JACKSON, TN
    LANZA, C
    KAVANAGH, KL
    MAYER, JW
    PHYSICAL REVIEW LETTERS, 1983, 51 (19) : 1783 - 1786
  • [2] Origin of Fermi-level pinning at GaAs surfaces and interfaces
    Colleoni, Davide
    Miceli, Giacomo
    Pasquarello, Alfredo
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2014, 26 (49)
  • [3] FERMI-LEVEL PINNING ENERGY AND CHEMISTRY AT INP(100) INTERFACES
    WALDROP, JR
    KOWALCZYK, SP
    GRANT, RW
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 628 - 629
  • [4] Effect of atomically controlled interfaces on Fermi-level pinning at metal/Ge interfaces
    Yamane, K.
    Hamaya, K.
    Ando, Y.
    Enomoto, Y.
    Yamamoto, K.
    Sadoh, T.
    Miyao, M.
    APPLIED PHYSICS LETTERS, 2010, 96 (16)
  • [5] FERMI-LEVEL PINNING AT HETEROJUNCTIONS
    ALLEN, RE
    BERES, RP
    DOW, JD
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 401 - 403
  • [6] Fermi-level pinning in nanocrystal memories
    Hou, Tuo-Hung
    Ganguly, Udayan
    Kan, Edwin C.
    IEEE ELECTRON DEVICE LETTERS, 2007, 28 (02) : 103 - 106
  • [7] FERMI-LEVEL PINNING AT THE INTERFACES OF SB, SN, AND GE ON GAAS(110) SURFACES
    CAO, RY
    MIYANO, K
    LINDAU, I
    SPICER, WE
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03): : 738 - 743
  • [8] FERMI-LEVEL PINNING AND CHEMICAL-STRUCTURE OF INP-METAL INTERFACES
    BRILLSON, LJ
    BRUCKER, CF
    KATNANI, AD
    STOFFEL, NG
    DANIELS, R
    MARGARITONDO, G
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 564 - 569
  • [9] Fermi-level pinning and charge neutrality level in germanium
    Dimoulas, A.
    Tsipas, P.
    Sotiropoulos, A.
    Evangelou, E. K.
    APPLIED PHYSICS LETTERS, 2006, 89 (25)
  • [10] FERMI-LEVEL PINNING AND HEAVILY DOPED OVERLAYERS
    MAHOWALD, PH
    SPICER, WE
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03): : 1539 - 1542