Thermal Conductivity of Amorphous Indium-Gallium-Zinc Oxide Thin Films

被引：61

作者：

Yoshikawa, Toru ^{[1
]}

Yagi, Takashi ^{[2
]}

Oka, Nobuto ^{[1
]}

Jia, Junjun ^{[1
]}

Yamashita, Yuichiro ^{[2
]}

Hattori, Koichiro ^{[2
]}

Seino, Yutaka ^{[2
]}

Taketoshi, Naoyuki ^{[2
]}

Baba, Tetsuya ^{[2
]}

Shigesato, Yuzo ^{[1
]}

机构：

[1] Aoyama Gakuin Univ, Grad Sch Sci & Engn, Sagamihara, Kanagawa 2525258, Japan

[2] Natl Inst Adv Ind Sci & Technol, Natl Metrol Inst Japan NMIJ, Tsukuba, Ibaraki 3058563, Japan

来源：

APPLIED PHYSICS EXPRESS | 2013年 / 6卷 / 02期

关键词：

THERMOPHYSICAL PROPERTIES; TRANSPARENT;

D O I：

10.7567/APEX.6.021101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the thermal conductivity of 200-nm-thick amorphous indium-gallium-zinc-oxide (a-IGZO) films. Films with a chemical composition of In : Ga : Zn = 1 : 1 : 0.6 were prepared by dc magnetron sputtering using an IGZO ceramic target and an Ar-O-2 sputtering gas. The carrier density of the films was systematically controlled from 10(14) to > 10(19) cm(-3) by varying the O-2 flow ratio. Their Hall mobility was slightly higher than 10 cm(2) .V-1 .s(-1). Those films were sandwiched between 100-nm-thick Mo layers; their thermal diffusivity, measured by a pulsed light heating thermoreflectance technique, was similar to 5.4 x 10(-7) m(2) .s(-1) and was almost independent of the carrier density. The average thermal conductivity was 1.4W.m(-1) .K-1. (C) 2013 The Japan Society of Applied Physics

引用

页数：3

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