Effects of deposition temperature on the structural and morphological properties of SnO2 films fabricated by pulsed laser deposition

被引：40

作者：

Khandelwal, Rakhi ^{[1
]}

Singh, Amit Pratap ^{[1
]}

Kapoor, Avinashi ^{[1
]}

Grigorescu, Sorin ^{[2
]}

Miglietta, Paola ^{[3
,4
]}

Stankova, Nadya Evgenieva ^{[5
]}

Perrone, Alessio ^{[3
,4
]}

机构：

[1] Univ Delhi, Dept Elect Sci, New Delhi 110021, India

[2] Univ Bucharest, Fac Phys, Bucharest, Romania

[3] Univ Salento, Dept Phys, I-73100 Lecce, Italy

[4] Univ Salento, Ist Nazl Fis Nucl, I-73100 Lecce, Italy

[5] Bulgarian Acad Sci, Inst Elect, BU-1784 Sofia, Bulgaria

来源：

OPTICS AND LASER TECHNOLOGY | 2009年 / 41卷 / 01期

关键词：

SnO2 thin films; pulsed laser deposition; Si substrate; OXIDE THIN-FILMS; OPTICAL-PROPERTIES; SPRAY-PYROLYSIS; GAS SENSORS; SENSING CHARACTERISTICS; GROWTH; SUBSTRATE; SIZE;

D O I：

10.1016/j.optlastec.2008.03.010

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Tin oxide (SnO2) thin films were grown on Si (10 0) substrates using pulsed laser deposition (PLD) in O-2 gas ambient (10 Pa) and at different substrate temperatures (RT, 150, 300 and 400 degrees C. The influence of the substrate temperature on the structural and morphological properties of the films was investigated using X-ray diffraction (XRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM). XRD measurements showed that the almost amorphous microstructure transformed into a polycrystalline SnO2 phase. The film deposited at 400 degrees C has the best crystalline properties, i.e. optimum growth conditions. However, the film grown at 300 degrees C has minimum average root mean square (RMS) roughness of 3.1 nm with average grain size of 6.958nm. The thickness of the thin films determined by the ellipsometer data is also presented and discussed. (C) 2008 Elsevier Ltd. All rights reserved.

引用

页码：89 / 93

页数：5

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