Low temperature resistivity of some high critical temperature copper oxides

被引：5

作者：

Grosu, I ^{[1
]}

Bucsa, IG ^{[1
]}

机构：

[1] Univ Cluj, Dept Theoret Phys, R-3400 Cluj Napoca, Romania

来源：

JOURNAL OF SUPERCONDUCTIVITY | 2001年 / 14卷 / 06期

关键词：

strong correlations; marginal Fermi liquid; nonmagnetic impurities; Born approximation; electrical resistivity;

D O I：

10.1023/A:1013291625326

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A simple model of electrical resistivity for some copper oxides, in the normal state, and at low temperatures, is given. We show that the logarithmic temperature dependence can be obtained taking into consideration a non-Fermi-liquid model with a singular density of states and in the presence of randomly distributed nonmagnetic impurities, without taking into consideration the localization effects.

引用

页码：683 / 686

页数：4

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