Strained Ge FinFET Structures Fabricated by Selective Epitaxial Growth

被引：0

作者：

Loo, Roger ^{[1
]}

Sun, Jianwu ^{[1
]}

Witters, Liesbeth ^{[1
]}

Hikavyy, Andriy ^{[1
]}

Vincent, Benjamin ^{[1
]}

Shimura, Yosuke ^{[1
,2
]}

Favia, Paola ^{[1
]}

Richard, Olivier ^{[1
]}

Bender, Hugo ^{[1
]}

Vandervorst, Wilfried ^{[1
,2
]}

Collaert, Nadine ^{[1
]}

Thean, Aaron ^{[1
]}

机构：

[1] IMEC, B-3001 Leuven, Belgium

[2] Katholieke Univ Leuven, Dept Phys & Astron, Nucl & Radiat Phys Sect, B-3001 Leuven, Belgium

来源：

2014 7TH INTERNATIONAL SILICON-GERMANIUM TECHNOLOGY AND DEVICE MEETING (ISTDM) | 2014年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：19 / 20

页数：2

共 50 条

[1] Microfabricated strained substrates for Ge epitaxial growth
Evans, PG
Rugheimer, PP
Lagally, MG
Lee, CH
Lal, A
Xiao, Y
Lai, B
Cai, Z
JOURNAL OF APPLIED PHYSICS, 2005, 97 (10)
[2] Ge Optical Emitters Fabricated by Ge Condensation and Epitaxial Growth
Oda, K.
Tani, K.
Saito, S.
Ido, T.
SIGE, GE, AND RELATED COMPOUNDS 5: MATERIALS, PROCESSING, AND DEVICES, 2012, 50 (09): : 277 - 286
[3] Epitaxial growth of strained Ge films on GaAs(001)
Salazar-Hernández, B
Vidal, MA
Navarro-Contreras, H
Vázquez-López, C
THIN SOLID FILMS, 1999, 352 (1-2) : 269 - 272
[4] HTSC devices fabricated by selective epitaxial growth
Lam, SKH
Sankrithyan, B
SUPERCONDUCTOR SCIENCE & TECHNOLOGY, 1999, 12 (04): : 215 - 218
[5] Selective epitaxial growth of compressively strained Ge layers on Si in 40-nm trench arrays
Kim, Byongju
Kim, Sun-Wook
Jang, Hyunchul
Kim, Jeong-Hoon
Koo, Sangmo
Kim, Dae-Hyun
Min, Byoung-Gi
Ko, Dae-Hong
THIN SOLID FILMS, 2014, 557 : 55 - 60
[6] Selective epitaxial growth of SiGe for strained Si transistors
Ning, X. J.
Gao, D.
Bonfanti, P.
Wu, H.
Guo, J.
Chen, J.
Shen, C. C.
Chen, I. C.
Cherng, G.
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2006, 134 (2-3): : 165 - 171
[7] Epitaxial CVD Growth of Ultra-Thin Si Passivation Layers on Strained Ge Fin Structures
Loo, R.
Arimura, H.
Cott, D.
Witters, L.
Pourtois, G.
Schulze, A.
Douhard, B.
Vanherle, W.
Eneman, G.
Richard, O.
Favia, P.
Mitard, J.
Mocuta, D.
Langer, R.
Collaert, N.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2018, 7 (02) : P66 - P72
[8] Epitaxial CVD Growth of Ultra-Thin Si Passivation Layers on Strained Ge Fin Structures
Loo, R.
Arimura, H.
Cott, D.
Witters, L.
Pourtois, G.
Schulze, A.
Douhard, B.
Vanherle, W.
Eneman, G.
Richard, O.
Favia, P.
Mitard, J.
Mocuta, D.
Langer, R.
Collaert, N.
SEMICONDUCTOR PROCESS INTEGRATION 10, 2017, 80 (04): : 241 - 252
[9] Selective epitaxial growth of GaAs on Ge by MOCVD
Brammertz, Guy
Mols, Yves
Degroote, Stefan
Leys, Maarten
Van Steenbergen, Jan
Borghs, Gustaaf
Caymax, Matty
JOURNAL OF CRYSTAL GROWTH, 2006, 297 (01) : 204 - 210
[10] Epitaxial growth of strained Mn5Ge3 nanoislands on Ge(001)
Olive Mendez, Sion F.
Michez, Lisa A.
Spiesser, Aurelie
LeThanh, Vinh
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2015, 252 (08): : 1854 - 1859

← 1 2 3 4 5 →