Effect of laser fluence on c-axis orientation of LiNbO3 piezoelectric films on nanocrystalline diamond by pulsed laser deposition

被引：4
|
作者：
Wang, Xinchang [1 ,2 ,3 ]
Tian, Sifang [1 ,2 ]
Man, Weidong [4 ]
Jia, Jianfeng [1 ,2 ]
Shi, Xinwei [1 ,2 ]
机构：
[1] Zhengzhou Univ, Key Lab Mat Phys, Minist Educ, Zhengzhou 450052, Peoples R China
[2] Zhengzhou Univ, Sch Phys & Engn, Zhengzhou 450052, Peoples R China
[3] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
[4] Wuhan Inst Technol, Hubei Prov Key Lab Plasma Chemsitry & Adv Mat, Wuhan 430073, Peoples R China
来源：
CRYSTAL RESEARCH AND TECHNOLOGY | 2012年 / 47卷 / 07期
关键词：
LiNbO3; piezoelectric films; diamond substrate; surface acoustic wave; LITHIUM-NIOBATE; THIN-FILMS; GROWTH;
D O I：
10.1002/crat.201100396
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Completely c-axis oriented LiNbO3 piezoelectric films have been deposited on nanocrystalline diamond (NCD)/Si substrates with SiO2 buffer layer by pulsed laser deposition. The amorphous SiO2 buffer layer was formed on NCD/Si substrates by sol-gel method. The c-axis orientation and crystallinity of LiNbO3 films are strongly dependent on the laser fluence, and the laser fluence 3.6 J/cm2 is found to be the optimal value for the growth of oriented LiNbO3 film, which has a smooth surface with composed of a large mount of uniform grains. The average surface roughness of LiNbO3 films is about 6.7 nm.
引用
收藏
页码：719 / 722
页数：4
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