Effect of laser fluence on c-axis orientation of LiNbO3 piezoelectric films on nanocrystalline diamond by pulsed laser deposition

被引：4

作者：

Wang, Xinchang ^{[1
,2
,3
]}

Tian, Sifang ^{[1
,2
]}

Man, Weidong ^{[4
]}

Jia, Jianfeng ^{[1
,2
]}

Shi, Xinwei ^{[1
,2
]}

机构：

[1] Zhengzhou Univ, Key Lab Mat Phys, Minist Educ, Zhengzhou 450052, Peoples R China

[2] Zhengzhou Univ, Sch Phys & Engn, Zhengzhou 450052, Peoples R China

[3] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

[4] Wuhan Inst Technol, Hubei Prov Key Lab Plasma Chemsitry & Adv Mat, Wuhan 430073, Peoples R China

来源：

CRYSTAL RESEARCH AND TECHNOLOGY | 2012年 / 47卷 / 07期

关键词：

LiNbO3; piezoelectric films; diamond substrate; surface acoustic wave; LITHIUM-NIOBATE; THIN-FILMS; GROWTH;

D O I：

10.1002/crat.201100396

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Completely c-axis oriented LiNbO3 piezoelectric films have been deposited on nanocrystalline diamond (NCD)/Si substrates with SiO2 buffer layer by pulsed laser deposition. The amorphous SiO2 buffer layer was formed on NCD/Si substrates by sol-gel method. The c-axis orientation and crystallinity of LiNbO3 films are strongly dependent on the laser fluence, and the laser fluence 3.6 J/cm2 is found to be the optimal value for the growth of oriented LiNbO3 film, which has a smooth surface with composed of a large mount of uniform grains. The average surface roughness of LiNbO3 films is about 6.7 nm.

引用

页码：719 / 722

页数：4

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