Impact of screen printing silver paste components on the space charge region recombination losses of industrial silicon solar cells

被引：31

作者：

Hoenig, R. ^{[1
]}

Kalio, A. ^{[1
]}

Sigwarth, J. ^{[1
]}

Clement, F. ^{[1
]}

Glatthaar, M. ^{[1
]}

Wilde, J. ^{[2
]}

Biro, D. ^{[1
]}

机构：

[1] Fraunhofer Inst Solar Energy Syst ISE, D-79110 Freiburg, Germany

[2] Univ Freiburg, Dept Microsyst Engn IMTEK, D-79110 Freiburg, Germany

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2012年 / 106卷

关键词：

j(02) evaluation; Space charge region recombination; Front side metallization; Thick film contacts; Silicon solar cell;

D O I：

10.1016/j.solmat.2012.06.040

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

An approved measurement method for evaluating space charge region recombination (SCR-recombination) induced by the screen printed front side metallization is applied for industrial solar cells with aluminum back surface field (Al-BSF) on monocrystalline Czochralski silicon (Cz-Si). The H-patterned base grid of all processed solar cells is screen printed with a commercially available front side silver paste, ensuring sufficiently good contacting and therefore good electrical performance of the solar cells. Additionally, irregular contact fingers are realized between the regular contact fingers of the base grid by applying different screen printing layouts with commercially available front side pastes to increase the front side metallization fraction linearly as well as by applying various test pastes for the layout with the highest metallization fraction. Well-known components of glass frits as lead oxide, zinc oxide, bismuth oxide and boron oxide can affect SCR-recombination. Therefore we fabricated test pastes with these specific paste/glass frit components. By applying this test structure, a comparable qualitative evaluation of SCR-recombination with respect to the specific paste component is demonstrated. Quantitative evaluations regarding the electrical performance of the solar cells as well as related microstructural investigations are presented. (c) 2012 Elsevier B.V. All rights reserved.

引用

页码：7 / 10

页数：4

共 4 条

[1] New measurement method for the investigation of space charge region recombination losses induced by the metallization of silicon solar cells [J].

Hoenig, R. ;

Glatthaar, M. ;

Clement, F. ;

Greulich, J. ;

Wilde, J. ;

Biro, D. .

PROCEEDINGS OF THE SILICONPV 2011 CONFERENCE (1ST INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS), 2011, 8 :694-699

[2]

Hoerteis M., 2010, P 35 IEEE PHOT SPEC

[3]

Kontermann S., 2006, P 21 EUR PHOT SOL EN, P613

[4] Physical understanding of printed thick-film front contacts of crystalline Si solar cells- Review of existing models and recent developments [J].

Schubert, Gunnar ;

Huster, Frank ;

Fath, Peter .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2006, 90 (18-19) :3399-3406

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