Buffer layers for the growth of GaN on sapphire by molecular beam epitaxy

被引：15
作者：
Ebel, R
Fehrer, M
Figge, S
Einfeldt, S
Selke, H
Hommel, D
机构：
[1] Univ Bremen, Inst Solid State Phys, D-28359 Bremen, Germany
[2] Univ Bremen, Inst Mat Phys & Struct Res, D-28359 Bremen, Germany
来源：
JOURNAL OF CRYSTAL GROWTH | 1999年 / 201卷
关键词：
MBE; GaN; buffer layer; morphology; defect structure;
D O I：
10.1016/S0022-0248(98)01369-4
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The change of structural, optical and electrical properties of GaN grown by plasma assisted molecular beam epitaxy on sapphire due to the introduction of GaN and AIN buffer layers is investigated. Whereas the layer surface becomes smoother its structural features remain very small. Photoluminescence and resistivity measurements confirm an increased density of extended defects produced by the buffer layer. A predominant lateral growth mode as known from metalorganic vapour-phase epitaxy is not observed. (C) 1999 Elsevier Science B.V. All rights reserved.
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收藏
页码：433 / 436
页数：4
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