Temperature-Dependant Study Of Phosphorus Ion Implantation In Germanium

被引：3

作者：

Razali, M. A. ^{[1
]}

Smith, A. J. ^{[1
]}

Jeynes, C. ^{[1
]}

Gwilliam, R. M. ^{[1
]}

机构：

[1] Univ Surrey, Fac Engn & Phys Sci, Adv Technol Inst, Surrey Ion Beam Ctr, Guildford GU2 7XH, Surrey, England

来源：

ION IMPLANTATION TECHNOLOGY 2012 | 2012年 / 1496卷

基金：

英国工程与自然科学研究理事会;

关键词：

Phosphorus; Ion Implantation; Damage; Germanium; High and low temperature implantation;

D O I：

10.1063/1.4766522

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present experimental results on shallow junction formation in germanium by phosphorus ion implantation and standard rapid thermal processing. An attempt is made to improve phosphorus activation by implanting phosphorus at high and low temperature. The focus is on studying the germanium damage and phosphorus activation as a function of implant temperature. Rutherford backscattering spectrometry with channelling and Hall Effect measurements are employed for characterisation of germanium damage and phosphorus activation, respectively. High and low temperature implants were found to be better compared to room temperature implant.

引用

页码：193 / 196

页数：4

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