Interlayer coupling in ferromagnetic semiconductor superlattices

被引：245

作者：

Jungwirth, T ^{[1
]}

Atkinson, WA

Lee, BH

MacDonald, AH

机构：

[1] Indiana Univ, Dept Phys, Bloomington, IN 47405 USA

[2] ASCR, Inst Phys, Prague 16200 6, Czech Republic

来源：

PHYSICAL REVIEW B | 1999年 / 59卷 / 15期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1103/PhysRevB.59.9818

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We develop a mean-field theory of carrier-induced ferromagnetism in diluted magnetic semiconductors. Our approach represents an improvement over standard Ruderman-Kittel-Kesuya-Yosida model allowing spatial inhomogeneity of the system, fi ee-carrier spin polarization, finite temperature, and free-carrier exchange and correlation to be accounted for self-consistently. As an example, we calculate the electronic structure of a MnxCa1-xAs/GaAs superlattice with alternating ferromagnetic and paramagnetic layers and demonstrate the possibility of semiconductor magnetoresistance systems with designed properties. [S0163-1829(99)02816-7].

引用

页码：9818 / 9821

页数：4

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