Suppression of Read Disturb Fail Caused by Boosting Hot Carrier Injection Effect for 3-D Stack NAND Flash Memories

被引：15

作者：

Choe, Byeong-In ^{[1
,2
,3
]}

Lee, Jung-Kyu ^{[1
,2
]}

Park, Byung-Gook ^{[1
,2
]}

Lee, Jong-Ho ^{[1
,2
]}

机构：

[1] Seoul Natl Univ, InterUniv Semicond Res Ctr, Seoul 151742, South Korea

[2] Seoul Natl Univ, Sch Elect Engn & Comp Sci, Seoul 151742, South Korea

[3] Samsung Elect Co Ltd, Flash TD Team, Semicond Res & Dev Ctr, Hwasung 445701, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2014年 / 35卷 / 01期

关键词：

NAND flash; read disturb; 3-D stack NAND flash; hot carrier injection;

D O I：

10.1109/LED.2013.2288991

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new bias pulse method was proposed to suppress read disturbance in unselected strings of 3-D stack NAND flash memories. Using the proposed read method, we could suppress effectively a large cell V-th shift generated by boosting hot carrier injection. As a result, the cell V-th shift in unselected string is quite similar to normal read disturbance in select string. The proposed read method was verified by both measurement and simulation.

引用

页码：42 / 44

页数：3

共 7 条

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