Effect of growth parameters on the MOVPE of GaAs/Ge for solar cell applications

被引：24

作者：

Agarwal, S ^{[1
]}

Tyagi, R ^{[1
]}

Singh, M ^{[1
]}

Jain, RK ^{[1
]}

机构：

[1] Solid State Phys Lab, Delhi 110054, India

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 1999年 / 59卷 / 1-2期

关键词：

D O I：

10.1016/S0927-0248(99)00027-6

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

GaAs has been grown on Ge substrate oriented 6 degrees off towards (1 1 0) by atmospheric pressure MOVPE. Various growth rates and growth temperatures were tried to get device quality epitaxial layers suitable for solar cell applications. It was observed that the growth temperatures and the growth rates affect the surface morphology, optical and interface properties and crystalline quality of the epitaxial layers. This was studied using optical microscope, photo luminescence, photovoltage measurements, ECV and double crystal X-ray diffractometry. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：19 / 26

页数：8

共 5 条

[1]

FLORES C, 1990, I PHYS C SER, V112, P591

[2] HIGH-EFFICIENCY (GREATER-THAN 20-PERCENT-AMO) GAAS SOLAR-CELLS GROWN ON INACTIVE-GE SUBSTRATES [J].