Influence of Fermi Level Alignment with Tin Oxide on the Hysteresis of Perovskite Solar Cells

被引:86
作者
Aygueler, Meltem F. [1 ,2 ]
Hufnagel, Alexander G. [1 ,2 ]
Rieder, Philipp [3 ]
Wussler, Michael [4 ]
Jaegermann, Wolfram [4 ]
Bein, Thomas [1 ,2 ]
Dyakonov, Vladimir [3 ,5 ]
Petrus, Michiel L. [1 ,2 ]
Baumann, Andreas [5 ]
Docampo, Pablo [6 ]
机构
[1] Ludwig Maximilians Univ Munchen, Dept Chem, Butenandtstr 5-13, D-81377 Munich, Germany
[2] Ludwig Maximilians Univ Munchen, Ctr NanoSci CeNS, Butenandtstr 5-13, D-81377 Munich, Germany
[3] Julius Maximilian Univ Wurzburg, Expt Phys 6, D-97074 Wurzburg, Germany
[4] Tech Univ Darmstadt, Mat Sci Dept, Otto Berndt Str 3, D-64287 Darmstadt, Germany
[5] Bavarian Ctr Appl Energy Res ZAE Bayern, D-97074 Wurzburg, Germany
[6] Newcastle Univ, Sch Elect & Elect Engn, Phys Dept, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England
关键词
perovskite solar cells; hysteresis; perovskite-contact interface; Fermi level alignment; trap depth energy; tin oxide; ANOMALOUS HYSTERESIS; HALIDE PEROVSKITES; FILMS; SNO2;
D O I
10.1021/acsami.8b00990
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We tune the Fermi level alignment between the SnOx electron transport layer (ETL) and Cs-0.05(FA(0.83)MA(0.17))(0.95)Pb(I0.83Br0.17)(3) and highlight that this parameter is interlinked with current-voltage hysteresis in perovskite solar cells (PSCs). Furthermore, thermally stimulated current measurements reveal that the depth of trap states in the ETL or at the ETL-perovskite interface correlates with Fermi level positions, ultimately linking it to the energy difference between the Fermi level and conduction band minimum. In the presence of deep trap states, charge accumulation and recombination at the interface are promoted, affecting the charge of PSCs.
引用
收藏
页码:11414 / 11419
页数:6
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