Effect of gas temperature on the structural and optoelectronic properties of a-Si:H thin films deposited by PECVD

被引：10

作者：

He, Jian ^{[1
]}

Wang, Chong ^{[1
]}

Li, Wei ^{[2
]}

Qi, Kang-cheng ^{[1
]}

Jiang, Ya-Dong ^{[2
]}

机构：

[1] Univ Elect Sci & Technol China, Sch Optoelect Informat, Chengdu 610054, Peoples R China

[2] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

来源：

SURFACE & COATINGS TECHNOLOGY | 2013年 / 214卷

关键词：

a-Si:H; PECVD; Gas temperature; Optoelectronic properties; AMORPHOUS-SILICON; RAMAN-SPECTRA; VIBRATIONAL-SPECTRA; HYDROGEN CONTENT; DEPENDENCE; GROWTH; VOIDS;

D O I：

10.1016/j.surfcoat.2012.11.014

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The effect of gas temperature (T-g) in the process of plasma-enhanced chemical vapor deposition (PECVD) on the structural and optoelectronic properties of the grown a-Si:H thin film has been examined using multiple characterization techniques. Gas temperature was confirmed to be an important parameter for the optimization of fabrication process and the improvement of structural and optoelectronic performances of the thin films. The structural properties of the thin films were examined using atomic force microscopy (AFM), Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, and electronic-spin resonance (ESR). Furthermore, the spectroscopic ellipsometry (SE), the optical transmission measurement in ultraviolet-visible region and the electrical measurement were used to investigate the optical and electrical properties of the thin films. It was found that the changes in T-g can modify the surface roughness, the amorphous network order, the hydrogen bonding modes and the density of the thin films, and eventually improve the optical and electrical properties. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：131 / 137

页数：7

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