0.2-μm AlGaN/GaN High Electron-Mobility Transistors With Atomic Layer Deposition Al2O3 Passivation

被引:29
作者
Xu, Dong [1 ]
Chu, Kanin [1 ]
Diaz, Jose [1 ]
Zhu, Wenhua [1 ]
Roy, Richard [1 ]
Pleasant, Louis Mt. [1 ]
Nichols, Kirby [1 ]
Chao, Pane-Chane [1 ]
Xu, Min [2 ,3 ]
Ye, Peide D. [2 ,3 ]
机构
[1] BAE Syst, Elect Syst, Microelect Ctr, Nashua, NH 03060 USA
[2] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
[3] Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
关键词
Aluminum oxide (Al2O3); atomic layer deposition (ALD); gallium nitride (GaN); high electron mobility transistor (HEMT); passivation; pulsed-IV; RF power; HEMTS;
D O I
10.1109/LED.2013.2255257
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report a successful application of atomic layer deposition (ALD) aluminum oxide as a passivation layer to gallium nitride high electron-mobility transistors (HEMTs). This new passivation process results in 8%-10% higher dc maximum drain current and maximum extrinsic transconductance, about one order of magnitude lower drain current in the subthreshold region, 10%-20% higher pulsed-IV drain current, and 27%-30% higher RF power with simultaneously 5-8 percentage point higher power-added efficiency. The achieved improvement in device performance is attributed to the outstanding quality of the interface between III-N and the ALD aluminum oxide resulting from the uniqueness of the adopted ALD process, featuring a wet-chemical-based wafer preparation as well as a pregrowth self-cleaning procedure in the growth chamber. This technology can be readily integrated into the HEMT-based integrated circuit fabrication process, making the ALD aluminum oxide-passivated GaN HEMTs excellent candidates for multiple microwave and millimeter-wave power applications.
引用
收藏
页码:744 / 746
页数:3
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