Temperature dependence of low-frequency noise characteristics in uniaxial tensile strained nMOSFETs

被引：1

作者：

Huang, Po Chin ^{[1
]}

Chang, Ching Yao ^{[1
]}

Cheng, Osbert ^{[2
]}

Wu, San Lein ^{[3
]}

Chang, Shoou Jinn ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan

[2] United Microelect Corp, Cent R&D Div, Tainan 744, Taiwan

[3] Cheng Shiu Univ, Dept Elect Engn, Kaohsiung 83347, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2015年 / 54卷 / 10期

关键词：

1/F NOISE; SI; MOBILITY; MODEL;

D O I：

10.7567/JJAP.54.100301

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this paper, we report on the low-frequency (1/f) noise characteristics of uniaxial tensile-strained nMOSFETs operated at high temperatures. We observed a small temperature sensitivity of 1/f noise in strained nMOSFETs. This can be attributed to the reduced tunneling attenuation length, suppressed phonon scattering, and increased mobility, which result from the strain-increased band splitting between the low-energy Delta 2 valleys and high-energy Delta 4 valleys. In addition, regardless of temperature, we found that the dominant mechanism of 1/f noise can be appropriately interpreted using the unified model, which incorporates both the carrier fluctuation and the correlated mobility fluctuation. (c) 2015 The Japan Society of Applied Physics

引用

页数：4

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