InGaAsN metal-semiconductor-metal photodetectors with modulation-doped heterostructures

被引：10

作者：

Hsu, SH ^{[1
]}

Su, YK

Chang, SJ

Chen, WC

Tsai, HL

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2006年 / 18卷 / 1-4期

关键词：

InGaAsN; metal-organic chemical vapor deposition (MOCVD); metal-semiconductor-metal photodetectors (MSM-PDs); modulation-doped;

D O I：

10.1109/LPT.2005.863989

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InGaAsN metal-semiconductor-metal (MSM) photodetectors (PDs) with modulation-doped heterostructures have been successfully fabricated. It was found from capacitance-voltage measurements that carriers were well confined. Using thermionic emission theory and measured dark currents, it was found that effective Schottky barrier heights were 0.61, 0.72, 0.50, and 0.23 eV for the MSM-PDs with Al0.2Ga0.8As cap layer doping N-d = 5 x 10(16),9 x 10(16) 2 x 10(17), and 6 x 10(17) cm(-3), respectively. Furthermore, it was found that measured responsivities were 0.02, 0.14, and 0.22 A/W and for the MSM-PDs with N-d = 5 x 10(16),9 x 10(16) and 2 x 10(17) cm(-3), respectively.

引用

页码：547 / 549

页数：3

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