Effects of Microwave Power on Thermal Annealing Behaviors of Hydrogenated Amorphous Silicon

被引：0

作者：

Wu, Ping-Jung ^{[1
]}

Chen, I-Chen ^{[1
]}

Lee, Chien-Chieh ^{[2
]}

Chang, Jenq-Yang ^{[2
,3
]}

Li, Tomi T.

Su, Chiung-Chieh ^{[4
]}

机构：

[1] Natl Cent Univ, Inst Mat Sci & Engn, Jhongli, Taiwan

[2] Natl Cent Univ, Ctr Opt Sci, Jhongli, Taiwan

[3] Natl Cent Univ, Dept Mech Engn, Jhongli, Taiwan

[4] Chung Shan Inst Sci & Technol, Taoyuan, Taiwan

来源：

PHOTOVOLTAICS FOR THE 21ST CENTURY 6 | 2011年 / 33卷 / 17期

关键词：

FILMS;

D O I：

10.1149/1.3553348

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

In this study, we have investigated the recrystallization behaviors of hydrogenated amorphous silicon (a-Si: H) films by post-growth thermal annealing as a function of microwave power using electron cyclotron resonance chemical vapor deposition (ECRCVD). The crytallinity of annealed a-Si: H films depends on the porosity of the as-deposited thin films. We suggested that the film with high porosity has lowest crystallinity due to strong oxygen diffusion and formation of SiOx inside the film.

引用

页码：65 / 69

页数：5

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