Effects of Microwave Power on Thermal Annealing Behaviors of Hydrogenated Amorphous Silicon

被引：0
|
作者：
Wu, Ping-Jung [1 ]
Chen, I-Chen [1 ]
Lee, Chien-Chieh [2 ]
Chang, Jenq-Yang [2 ,3 ]
Li, Tomi T.
Su, Chiung-Chieh [4 ]
机构：
[1] Natl Cent Univ, Inst Mat Sci & Engn, Jhongli, Taiwan
[2] Natl Cent Univ, Ctr Opt Sci, Jhongli, Taiwan
[3] Natl Cent Univ, Dept Mech Engn, Jhongli, Taiwan
[4] Chung Shan Inst Sci & Technol, Taoyuan, Taiwan
来源：
PHOTOVOLTAICS FOR THE 21ST CENTURY 6 | 2011年 / 33卷 / 17期
关键词：
FILMS;
D O I：
10.1149/1.3553348
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
In this study, we have investigated the recrystallization behaviors of hydrogenated amorphous silicon (a-Si: H) films by post-growth thermal annealing as a function of microwave power using electron cyclotron resonance chemical vapor deposition (ECRCVD). The crytallinity of annealed a-Si: H films depends on the porosity of the as-deposited thin films. We suggested that the film with high porosity has lowest crystallinity due to strong oxygen diffusion and formation of SiOx inside the film.
引用
收藏
页码：65 / 69
页数：5
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