Observation of negative capacitances in metal-insulator-metal devices based on a-BaTiO3: H

被引：33

作者：

El Kamel, F. ^{[1
]}

Gonon, P. ^{[2
]}

Jomni, F. ^{[3
]}

Yangui, B. ^{[3
]}

机构：

[1] UJF, CNRS, Grenoble Elect Engn Lab, F-38042 Grenoble 9, France

[2] UJF, CNRS, CEA LETI MINATEC, LTM, F-38054 Grenoble 9, France

[3] LMOP, Tunis 2092, Tunisia

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 04期

关键词：

D O I：

10.1063/1.2966352

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We study capacitance dispersion in hydrogen-doped amorphous barium titanate (a-BaTiO3: H). Negative values of capacitance are observed at very low frequencies (<10 Hz). This behavior is shown to be related to proton and oxygen vacancy conductions. A qualitative model is proposed to explain negative capacitances. It involves the modification of the Schottky barrier at the metal-dielectric interface upon accumulation of mobile protons and oxygen vacancies at electrodes. (C) 2008 American Institute of Physics.

引用

页数：3

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