Observation of negative capacitances in metal-insulator-metal devices based on a-BaTiO3: H

被引：32
作者：
El Kamel, F. [1 ]
Gonon, P. [2 ]
Jomni, F. [3 ]
Yangui, B. [3 ]
机构：
[1] UJF, CNRS, Grenoble Elect Engn Lab, F-38042 Grenoble 9, France
[2] UJF, CNRS, CEA LETI MINATEC, LTM, F-38054 Grenoble 9, France
[3] LMOP, Tunis 2092, Tunisia
来源：
APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 04期
关键词：
D O I：
10.1063/1.2966352
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We study capacitance dispersion in hydrogen-doped amorphous barium titanate (a-BaTiO3: H). Negative values of capacitance are observed at very low frequencies (<10 Hz). This behavior is shown to be related to proton and oxygen vacancy conductions. A qualitative model is proposed to explain negative capacitances. It involves the modification of the Schottky barrier at the metal-dielectric interface upon accumulation of mobile protons and oxygen vacancies at electrodes. (C) 2008 American Institute of Physics.
引用
收藏
页数：3
相关论文
共 15 条
  • [1] Effect of hydrogen on Pb(Zr, Ti)O3-based ferroelectric capacitors
    Aggarwal, S
    Perusse, SR
    Tipton, CW
    Ramesh, R
    Drew, HD
    Venkatesan, T
    Romero, DB
    Podobedov, VB
    Weber, A
    [J]. APPLIED PHYSICS LETTERS, 1998, 73 (14) : 1973 - 1975
  • [2] Deuterium-induced degradation of (Ba, Sr)TiO3 films
    Ahn, JH
    McIntyre, PC
    Mirkarimi, LW
    Gilbert, SR
    Amano, J
    Schulberg, M
    [J]. APPLIED PHYSICS LETTERS, 2000, 77 (09) : 1378 - 1380
  • [3] Negative capacitance caused by electron injection through interfacial states in organic light-emitting diodes
    Bisquert, J
    Garcia-Belmonte, G
    Pitarch, A
    Bolink, HJ
    [J]. CHEMICAL PHYSICS LETTERS, 2006, 422 (1-3) : 184 - 191
  • [4] Negative capacitance in organic semiconductor devices: Bipolar injection and charge recombination mechanism
    Ehrenfreund, E.
    Lungenschmied, C.
    Dennler, G.
    Neugebauer, H.
    Sariciftci, N. S.
    [J]. APPLIED PHYSICS LETTERS, 2007, 91 (01)
  • [5] Negative capacitance effect in semiconductor devices
    Ershov, M
    Liu, HC
    Li, L
    Buchanan, M
    Wasilewski, ZR
    Jonscher, AK
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (10) : 2196 - 2206
  • [6] Negative capacitances in low-mobility solids
    Gommans, HHP
    Kemerink, M
    Janssen, RAJ
    [J]. PHYSICAL REVIEW B, 2005, 72 (23)
  • [7] High-density capacitors based on amorphous BaTiO3 layers grown under hydrogen containing atmosphere
    Gonon, P.
    El Kamel, F.
    [J]. APPLIED PHYSICS LETTERS, 2007, 90 (23)
  • [8] Dielectric response of cu/amorphous BaTiO3/Cu capacitors
    Gonon, P.
    El Kamel, F.
    [J]. JOURNAL OF APPLIED PHYSICS, 2007, 101 (07)
  • [9] THE PHYSICAL ORIGIN OF NEGATIVE CAPACITANCE
    JONSCHER, AK
    [J]. JOURNAL OF THE CHEMICAL SOCIETY-FARADAY TRANSACTIONS II, 1986, 82 : 75 - 81
  • [10] Negative capacitance in forward biased hydrogenated amorphous silicon p+-i-n+ diodes
    Lemmi, F
    Johnson, NM
    [J]. APPLIED PHYSICS LETTERS, 1999, 74 (02) : 251 - 253
12