Ultra-high silicon doped N-polar GaN contact layers grown by metal-organic chemical vapor deposition

被引:18
作者
Hatui, N. [1 ]
Krishna, A. [1 ]
Li, H. [1 ]
Gupta, C. [1 ]
Romanczyk, B. [1 ]
Acker-James, D. [1 ]
Ahmadi, E. [1 ]
Keller, S. [1 ]
Mishra, U. K. [1 ]
机构
[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
关键词
III-Nitride; MOCVD; Si doping; GaN; HEMT; regrown contact; contact resistance; MODULATION EPITAXY;
D O I
10.1088/1361-6641/ab9727
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report thin, high quality n(+)type doped N-polar GaN contact layers grown using metal-organic chemical vapor deposition with carrier concentration as high as 3.5 x 10(20)cm(-3)and an electron mobility of 80 cm(2)V(-1)s(-1)at room temperature resulting in a low sheet resistance of 57.3 Omega/ and specific contact resistance of 1.7 x 10(-7)Omega.cm(2). These results were obtained via silicon doping of (000 (1) over bar) N-polar GaN grown on 4 degrees miscut sapphire substrates using a flow modulation growth scheme at a deposition temperature of 850 degrees C.
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页数:6
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