Ultra-high silicon doped N-polar GaN contact layers grown by metal-organic chemical vapor deposition

被引：18

作者：

Hatui, N. ^{[1
]}

Krishna, A. ^{[1
]}

Li, H. ^{[1
]}

Gupta, C. ^{[1
]}

Romanczyk, B. ^{[1
]}

Acker-James, D. ^{[1
]}

Ahmadi, E. ^{[1
]}

Keller, S. ^{[1
]}

Mishra, U. K. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2020年 / 35卷 / 09期

关键词：

III-Nitride; MOCVD; Si doping; GaN; HEMT; regrown contact; contact resistance; MODULATION EPITAXY;

D O I：

10.1088/1361-6641/ab9727

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report thin, high quality n(+)type doped N-polar GaN contact layers grown using metal-organic chemical vapor deposition with carrier concentration as high as 3.5 x 10(20)cm(-3)and an electron mobility of 80 cm(2)V(-1)s(-1)at room temperature resulting in a low sheet resistance of 57.3 Omega/ and specific contact resistance of 1.7 x 10(-7)Omega.cm(2). These results were obtained via silicon doping of (000 (1) over bar) N-polar GaN grown on 4 degrees miscut sapphire substrates using a flow modulation growth scheme at a deposition temperature of 850 degrees C.

引用

页数：6

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