Radiative Lifetime Modification of LaF3:Nd Nanoparticles Embedded in 3D Silicon Photonic Crystals

被引：20

作者：

Ning, Hailong ^{[1
,2
]}

Mihi, Agustin ^{[1
,2
]}

Geddes, Joseph B., III ^{[1
,2
]}

Miyake, Masao ^{[1
,2
]}

Braun, Paul V. ^{[1
,2
]}

机构：

[1] Univ Illinois, Dept Mat Sci & Engn, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA

[2] Univ Illinois, Beckman Inst, Urbana, IL 61801 USA

来源：

ADVANCED MATERIALS | 2012年 / 24卷 / 23期

关键词：

spontaneous emission; nanoparticle emitters; photonic crystals; rare-earth nanoparticles; photonic density of states; SPONTANEOUS EMISSION; PLANAR DEFECTS; BAND-GAP; QUANTUM DOTS; NANOCRYSTALS; FLUORESCENCE; MOLECULES; DYNAMICS; DEVICES; OPALS;

D O I：

10.1002/adma.201104769

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The photonic density of states (DOS) of a silicon inverse photonic crystal is probed using the radiative emission of LaF 3:Nd nanoparticles. These emitters are embedded as a thin planar defect within the interior of photonic crystals with varying silicon filling fractions. The alignment of the narrow emission of the particles with the high and low photonic DOS regions is achieved. The time-resolved measurements reveal that the radiative lifetime of the embedded Nd 3+ is strongly influenced by the surrounding DOS provided by the silicon inverse opals. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：OP153 / OP158

页数：6

共 48 条

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