Time scales of bias voltage effects in FE/MgO-based magnetic tunnel junctions with voltage-dependent perpendicular anisotropy

被引：1
作者：
Lytvynenko, Ia. M. [1 ]
Hauet, T. [2 ]
Montaigne, F. [2 ]
Bibyk, V. V. [1 ]
Andrieu, S. [2 ]
机构：
[1] Sumy State Univ, UA-40007 Sumy, Ukraine
[2] Univ Lorraine, Inst Jean Lamour, CNRS, UMR 7198, F-54506 Vandoeuvre Les Nancy, France
来源：
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2015年 / 396卷
关键词：
ATOMIC LAYERS;
D O I：
10.1016/j.jmmm.2015.08.064
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Interplay between voltage induced magnetic anisotropy transition and voltage induced atomic diffusion is studied in epitaxial V/Fe (0.7 nm)/ MgO/ Fe(5 nm)/Co/Au magnetic tunnel junction where thin Fe soft electrode has in-plane or out-of-plane anisotropy depending on the sign of the bias voltage. We investigate the origin of the slow resistance variation occurring when switching bias voltage in opposite polarity. We demonstrate that the time to reach resistance stability after voltage switching is reduced when increasing the voltage amplitude or the temperature. A single energy barrier of about 0.2 eV height is deduced from temperature dependence. Finally, we demonstrate that the resistance change is not correlated to a change in soft electrode anisotropy. This conclusion contrasts with observations recently reported on analogous systems. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码：333 / 337
页数：5
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