Measurement and comparison of AC parameters of silicon (BSR and BSFR) and gallium arsenide (GaAs/Ge) solar cells used in space applications

被引：53

作者：

Kumar, RA ^{[1
]}

Suresh, MS

Nagaraju, J

机构：

[1] ISRO, Satellite Ctr, Bangalore 560017, Karnataka, India

[2] Indian Inst Sci, Dept Instrumentat, Bangalore 560012, Karnataka, India

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2000年 / 60卷 / 02期

关键词：

solar cells; AC parameters; measurement;

D O I：

10.1016/S0927-0248(99)00080-X

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The AC parameters of silicon (BSR and BSFR) solar cells and GaAs/Ge solar cell have been measured using impedance spectroscopy. Each cell capacitance, dynamic resistance and series resistance were measured and compared. GaAs/Ge solar cell has shown only the transition capacitance throughout its operating range while silicon (BSR and BSFR) solar cells exhibited both transition and diffusion capacitance. The theoretical and experimental values of dynamic resistance were compared and found in good agreement while the diode factor in silicon solar cells varies from 2 to 1, where as in GaAs/Ge solar cell it varies from 4 to 2 to 1. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：155 / 166

页数：12