Ultrafast carrier dynamics in thin-films of the topological insulator Bi2Se3

被引：107

作者：

Glinka, Yuri D. ^{[1
,2
]}

Babakiray, Sercan ^{[1
]}

Johnson, Trent A. ^{[1
]}

Bristow, Alan D. ^{[1
]}

Holcomb, Mikel B. ^{[1
]}

Lederman, David ^{[1
]}

机构：

[1] W Virginia Univ, Dept Phys & Astron, Morgantown, WV 26506 USA

[2] Natl Acad Sci Ukraine, Inst Phys, UA-03028 Kiev, Ukraine

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 15期

关键词：

DIRAC CONE; EXCITATION;

D O I：

10.1063/1.4824821

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Transient reflectivity measurements of thin films, ranging from 6 to 40 nm in thickness, of the topological insulator Bi2Se3 reveal a strong dependence of the carrier relaxation time on the film thickness. For thicker films, the relaxation dynamics are similar to those of bulk Bi2Se3, where the contribution of the bulk insulating phase dominates over that of the surface metallic phase. The carrier relaxation time shortens with decreasing film thickness, reaching values comparable to those of noble metals. This effect may result from the hybridization of Dirac cone states at the opposite surfaces for the thinnest films. (C) 2013 AIP Publishing LLC.

引用

页数：5

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