A nucleation and growth model of silicon nanoparticles produced by pulsed laser deposition via Monte Carlo simulation

被引:4
作者
Wang, Yinglong [1 ]
Qin, Aili [1 ,2 ]
Chu, Lizhi [1 ]
Deng, Zechao [1 ]
Ding, Xuecheng [1 ]
Guan, Li [1 ]
机构
[1] Hebei Univ, Coll Phys Sci & Technol, Baoding 071002, Peoples R China
[2] Hebei Univ Engn, Coll Sci, Handan 056038, Peoples R China
来源
MODERN PHYSICS LETTERS B | 2017年 / 31卷 / 04期
基金
中国国家自然科学基金;
关键词
Nucleation and growth of Si nanoparticles; pulsed laser deposition; size distribution; Monte Carlo Simulation; ABLATION; GAS; DYNAMICS; SI; FILMS;
D O I
10.1142/S021798491750021X
中图分类号
O59 [应用物理学];
学科分类号
摘要
We simulated the nucleation and growth of Si nanoparticles produced by pulse laser deposition using Monte Carlo method at the molecular (microscopic) level. In the model, the mechanism and thermodynamic conditions of nucleation and growth of Si nanoparticles were described. In a real physical scale of target-substrate configuration, the model was used to analyze the average size distribution of Si nanoparticles in argon ambient gas and the calculated results are in agreement with the experimental results.
引用
收藏
页数:7
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