Total dose radiation effects of Pt/PZT/Pt ferroelectric capacitors fabricated by PLD method

被引：9

作者：

Gao, JX ^{[1
]}

Zheng, LR

Huang, BP

Song, ZT

Yang, LX

Fan, YJ

Zhu, DZ

Lin, CL

机构：

[1] Chinese Acad Sci, Shanghai Inst Nucl Res, Shanghai 201800, Peoples R China

[2] Chinese Acad Sci, Shanghai Inst Met, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1999年 / 14卷 / 09期

关键词：

D O I：

10.1088/0268-1242/14/9/315

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In order to study total dose radiation effects of PbZrxTi1-xO3 (PZT) film made with the pulsed excimer laser deposition (PLD) technique, hysteresis loops and capacitance-voltage (C-V) curves of PZT film capacitors have been measured before and after gamma-ray irradiation. The results show that, in a range of 0-2 x 10(5) Gy (Si), with increasing total dose, the remanent polarization 2P(r) increased while dielectric constant epsilon decreased. This can be explained by charges trapped by some defects during irradiation.

引用

页码：836 / 839

页数：4

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