Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions

被引：116

作者：

Kuwano, Yuka ^{[1
]}

Kaga, Mitsuru ^{[1
]}

Morita, Takatoshi ^{[1
]}

Yamashita, Kouji ^{[1
]}

Yagi, Kouta ^{[1
]}

Iwaya, Motoaki ^{[1
]}

Takeuchi, Tetsuya ^{[1
]}

Kamiyama, Satoshi ^{[1
]}

Akasaki, Isamu ^{[1
,2
]}

机构：

[1] Meijo Univ, Fac Sci & Technol, Nagoya, Aichi 4688502, Japan

[2] Nagoya Univ, Akasaki Res Ctr, Nagoya, Aichi 4648603, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2013年 / 52卷 / 08期

关键词：

ELECTRON-BEAM IRRADIATION; ATOMIC-HYDROGEN; PASSIVATION; ACTIVATION; MECHANISM; COMPLEX;

D O I：

10.7567/JJAP.52.08JK12

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrated lateral Mg activation along p-GaN layers underneath n-GaN surface layers in nitride-based light emitting diodes (LEDs) with GaInN tunnel junctions. A high temperature thermal annealing was effective for the lateral Mg activation when the p-GaN layers were partly exposed to an oxygen ambient as etched sidewalls. The activated regions gradually extended from the etched sidewalls to the centers with an increase of annealing time, observed as emission regions with current injection. These results suggest that hydrogen diffuses not vertically thorough the above n-GaN but laterally through the exposed portions of the p-GaN. The lowest voltage drop at the GaInN tunnel junction was estimated to be 0.9V at 50mA with the optimized annealing condition. (C) 2013 The Japan Society of Applied Physics

引用

页数：3

共 18 条

[1] P-TYPE CONDUCTION IN MG-DOPED GAN TREATED WITH LOW-ENERGY ELECTRON-BEAM IRRADIATION (LEEBI) [J].

AMANO, H ;

KITO, M ;

HIRAMATSU, K ;

AKASAKI, I .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (12) :L2112-L2114

[2] METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF A HIGH-QUALITY GAN FILM USING AN AIN BUFFER LAYER [J].

AMANO, H ;

SAWAKI, N ;

AKASAKI, I ;

TOYODA, Y .

APPLIED PHYSICS LETTERS, 1986, 48 (05) :353-355

[3] PASSIVATION OF ZINC ACCEPTORS IN INP BY ATOMIC-HYDROGEN COMING FROM ARSINE DURING METALORGANIC VAPOR-PHASE EPITAXY [J].

ANTELL, GR ;

BRIGGS, ATR ;

BUTLER, BR ;

KITCHING, SA ;

STAGG, JP ;

CHEW, A ;

SYKES, DE .

APPLIED PHYSICS LETTERS, 1988, 53 (09) :758-760

[4] Influence of low-energy electron beam irradiation on defects in activated Mg-doped GaN [J].

Gelhausen, O ;

Klein, HN ;

Phillips, MR ;

Goldys, EM .

APPLIED PHYSICS LETTERS, 2002, 81 (20) :3747-3749

[5]

GOTZ W, 1995, APPL PHYS LETT, V67, P2666, DOI 10.1063/1.114330

[6] Local vibrational modes of the Mg-H acceptor complex in GaN [J].

Gotz, W ;

Johnson, NM ;

Bour, DP ;

McCluskey, MD ;

Haller, EE .

APPLIED PHYSICS LETTERS, 1996, 69 (24) :3725-3727

[7] Influence of oxygen on the activation of p-type GaN [J].

Hull, BA ;

Mohney, SE ;

Venugopalan, HS ;

Ramer, JC .

APPLIED PHYSICS LETTERS, 2000, 76 (16) :2271-2273

[8] Polarization-engineered GaN/InGaN/GaN tunnel diodes [J].

Krishnamoorthy, Sriram ;

Nath, Digbijoy N. ;

Akyol, Fatih ;

Park, Pil Sung ;

Esposto, Michele ;

Rajan, Siddharth .

APPLIED PHYSICS LETTERS, 2010, 97 (20)

[9] CANDELA-CLASS HIGH-BRIGHTNESS INGAN/ALGAN DOUBLE-HETEROSTRUCTURE BLUE-LIGHT-EMITTING DIODES [J].

NAKAMURA, S ;

MUKAI, T ;

SENOH, M .

APPLIED PHYSICS LETTERS, 1994, 64 (13) :1687-1689

[10] THERMAL ANNEALING EFFECTS ON P-TYPE MG-DOPED GAN FILMS [J].

NAKAMURA, S ;

MUKAI, T ;

SENOH, M ;

IWASA, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1992, 31 (2B) :L139-L142

← 1 2 →