Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions

被引：114

作者：

Kuwano, Yuka ^{[1
]}

Kaga, Mitsuru ^{[1
]}

Morita, Takatoshi ^{[1
]}

Yamashita, Kouji ^{[1
]}

Yagi, Kouta ^{[1
]}

Iwaya, Motoaki ^{[1
]}

Takeuchi, Tetsuya ^{[1
]}

Kamiyama, Satoshi ^{[1
]}

Akasaki, Isamu ^{[1
,2
]}

机构：

[1] Meijo Univ, Fac Sci & Technol, Nagoya, Aichi 4688502, Japan

[2] Nagoya Univ, Akasaki Res Ctr, Nagoya, Aichi 4648603, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2013年 / 52卷 / 08期

关键词：

ELECTRON-BEAM IRRADIATION; ATOMIC-HYDROGEN; PASSIVATION; ACTIVATION; MECHANISM; COMPLEX;

D O I：

10.7567/JJAP.52.08JK12

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrated lateral Mg activation along p-GaN layers underneath n-GaN surface layers in nitride-based light emitting diodes (LEDs) with GaInN tunnel junctions. A high temperature thermal annealing was effective for the lateral Mg activation when the p-GaN layers were partly exposed to an oxygen ambient as etched sidewalls. The activated regions gradually extended from the etched sidewalls to the centers with an increase of annealing time, observed as emission regions with current injection. These results suggest that hydrogen diffuses not vertically thorough the above n-GaN but laterally through the exposed portions of the p-GaN. The lowest voltage drop at the GaInN tunnel junction was estimated to be 0.9V at 50mA with the optimized annealing condition. (C) 2013 The Japan Society of Applied Physics

引用

页数：3

共 18 条

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