Mg implantation dose dependence of MOS channel characteristics in GaN double-implanted MOSFETs

被引：40
作者：
Tanaka, Ryo [1 ]
Takashima, Shinya [1 ]
Ueno, Katsunori [1 ]
Matsuyama, Hideaki [1 ]
Edo, Masaharu [1 ]
Nakagawa, Kiyokazu [2 ]
机构：
[1] Fuji Elect Co Ltd, Adv Technol Lab, Tokyo 1918502, Japan
[2] Univ Yamanashi, Ctr Crystal Sci & Technol, Kofu, Yamanashi 4008511, Japan
来源：
APPLIED PHYSICS EXPRESS | 2019年 / 12卷 / 05期
关键词：
P-N-JUNCTION; TRANSISTORS;
D O I：
10.7567/1882-0786/ab0c2c
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Lateral GaN double-implanted MOSFETs (DIMOSFETs) on Mg ion implanted GaN layers with different Mg ion implantation doses have been evaluated to investigate the impact of Mg dose on MOS channel properties. It is demonstrated that the threshold voltage (Vth) and the field effect mobility (mu(fe)) depend on the Mg dose. A maximum mu(fe) of 173 cm(2) V-1 s(-1) has been obtained with a V-th of 2.2 V on the Mg implantation layer with a dose of 4.2 x 10(13) cm(-2). The obtained results indicate that the channel characteristics of a GaN DIMOSFET can be designed by p-type ion implantation. (c) 2019 The Japan Society of Applied Physics
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页数：3
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共 29 条
  • [1] Progress and Prospect of the Growth of Wide-Band-Gap Group III Nitrides: Development of the Growth Method for Single-Crystal Bulk GaN
    Amano, Hiroshi
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (05)
  • [2] [Anonymous], PHYS SEMICONDUCTOR D
  • [3] WIDE BANDGAP COMPOUND SEMICONDUCTORS FOR SUPERIOR HIGH-VOLTAGE UNIPOLAR POWER DEVICES
    CHOW, TP
    TYAGI, R
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (08) : 1481 - 1483
  • [4] Over 3.0 GW/cm2 Figure-of-Merit GaN p-n Junction Diodes on Free-Standing GaN Substrates
    Hatakeyama, Yoshitomo
    Nomoto, Kazuki
    Kaneda, Naoki
    Kawano, Toshihiro
    Mishima, Tomoyoshi
    Nakamura, Tohru
    [J]. IEEE ELECTRON DEVICE LETTERS, 2011, 32 (12) : 1674 - 1676
  • [5] Enhancement-mode n-channel GaN MOSFETs on p-and n-GaN/sapphire substrates
    Huang, W.
    Khan, T.
    Chow, T. P.
    [J]. IEEE ELECTRON DEVICE LETTERS, 2006, 27 (10) : 796 - 798
  • [6] MgO/p-GaN enhancement mode metal-oxide semiconductor field-effect transistors
    Irokawa, Y
    Nakano, Y
    Ishiko, M
    Kachi, T
    Kim, J
    Ren, F
    Gila, BP
    Onstine, AH
    Abernathy, CR
    Pearton, SJ
    Pan, CC
    Chen, GT
    Chyi, JI
    [J]. APPLIED PHYSICS LETTERS, 2004, 84 (15) : 2919 - 2921
  • [7] High-Power Normally-Off GaN MOSFET
    Kambayashi, H.
    Satoh, Y.
    Kokawa, T.
    Ikeda, N.
    Nomura, T.
    Kato, S.
    Teramoto, A.
    Sugawa, S.
    Ohmi, T.
    [J]. GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES, 2011, 41 (08): : 87 - 100
  • [8] 3.7 kV Vertical GaN PN Diodes
    Kizilyalli, Isik C.
    Edwards, Andrew P.
    Nie, Hui
    Bour, Dave
    Prunty, Thomas
    Disney, Don
    [J]. IEEE ELECTRON DEVICE LETTERS, 2014, 35 (02) : 247 - 249
  • [9] High Voltage Vertical GaN p-n Diodes With Avalanche Capability
    Kizilyalli, Isik C.
    Edwards, Andrew P.
    Nie, Hui
    Disney, Don
    Bour, Dave
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (10) : 3067 - 3070
  • [10] GaN-Based trench gate metal oxide semiconductor field-effect transistor fabricated with novel wet etching
    Kodama, Masahito
    Sugimoto, Masahiro
    Hayashi, Eiko
    Soejima, Narumasa
    Ishiguro, Osamu
    Kanechika, Masakazu
    Itoh, Kenji
    Ueda, Hiroyuki
    Uesugi, Tsutomu
    Kachi, Tetsu
    [J]. APPLIED PHYSICS EXPRESS, 2008, 1 (02)
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