Chromatic X-ray imaging with a fine pitch CdTe sensor coupled to a large area photon counting pixel ASIC

被引：107

作者：

Bellazzini, R. ^{[1
,2
]}

Spandre, G. ^{[1
]}

Brez, A. ^{[1
]}

Minuti, M. ^{[1
]}

Pinchera, M. ^{[1
]}

Mozzo, P. ^{[2
]}

机构：

[1] INFN Pisa, I-56127 Pisa, Italy

[2] INFN Pisa, PIXIRAD Imaging Counters srl, I-56127 Pisa, Italy

来源：

JOURNAL OF INSTRUMENTATION | 2013年 / 8卷

关键词：

Solid state detectors; X-ray detectors; Pixelated detectors and associated VLSI electronics; X-ray radiography and digital radiography (DR); READOUT CHIP; DETECTOR; WORKING; MODE;

D O I：

10.1088/1748-0221/8/02/C02028

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

An innovative X-ray imaging sensor based on Chromatic Photon Counting technology with intrinsic digital characteristics is presented. The system counts individually the incident X-ray photons and selects them according to their energy to produce two color images per exposure. The energy selection occurs in real time and at radiographic imaging speed (GHz global counting rate). Photon counting, color mode and a very fine spatial resolution (more than 10 LP/mm at MTF50) allow to obtain a high ratio between image quality and absorbed dose. The individual building block of the imaging system is a two-side buttable semiconductor radiation detector made of a thin pixellated CdTe crystal coupled to a large area VLSI CMOS pixel ASIC. Modules with 1, 2, 4, and 8 block units have been built. The largest module has 25 x 2.5 cm(2) sensitive area. Results and images obtained from testing different modules are presented.

引用

页数：10

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