Polarizable-bond model for second-harmonic generation

被引:66
作者
Mendoza, BS [1 ]
Mochan, WL [1 ]
机构
[1] UNIV NACL AUTONOMA MEXICO,INST FIS,LAB CUERNAVACA,CUERNAVACA 62191,MORELOS,MEXICO
来源
PHYSICAL REVIEW B | 1997年 / 55卷 / 04期
关键词
D O I
10.1103/PhysRevB.55.2489
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We develop a theory for the calculation of the optical second-harmonic generation spectra of Si incorporating the nonlinear surface local field effect. Our model consists of four interpenetrated fee lattices of nonlinearly polarizable bonds. Each of them is anisotropic and although they are centrosymmetric, they respond quadratically to the spatial inhomogeneities of the polarizing local held. The large gradient of the field induced at a bond due to the dipole moment of a neighbor leads to a second order polarization. In the bulk, each bond lies within a centrosymmetric environment, so this contribution is canceled out after summing over all other bonds. However, at the surface it is not compensated and it leads to a large nonlinear macroscopic response. Our model parameters are fitted to the nonlinear anisotropy measured at 1.17 and 2.34 eV. We calculate a linear anisotropy spectra for the (110) surface in agreement with previous measurements. Our nonlinear spectra show peaks at 1.65 eV for a strained (001) surface and at 1.75 eV for a (111) surface, in agreement with some recent experimental results.
引用
收藏
页码:2489 / 2502
页数:14
相关论文
共 62 条
  • [1] AKTSIPETROV OA, 1986, ZH EKSP TEOR FIZ, V64, P167
  • [2] ANISOTROPIES IN THE ABOVE BAND-GAP OPTICAL-SPECTRA OF CUBIC SEMICONDUCTORS
    ASPNES, DE
    STUDNA, AA
    [J]. PHYSICAL REVIEW LETTERS, 1985, 54 (17) : 1956 - 1959
  • [3] DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV
    ASPNES, DE
    STUDNA, AA
    [J]. PHYSICAL REVIEW B, 1983, 27 (02) : 985 - 1009
  • [4] LARGE ANISOTROPY IN THE OPTICAL REFLECTANCE OF AG(110) SINGLE-CRYSTALS - EXPERIMENT AND THEORY
    BORENSZTEIN, Y
    MOCHAN, WL
    TARRIBA, J
    BARRERA, RG
    TADJEDDINE, A
    [J]. PHYSICAL REVIEW LETTERS, 1993, 71 (14) : 2334 - 2337
  • [5] THEORY OF 2ND-HARMONIC GENERATION AT SEMICONDUCTOR SURFACES
    CINI, M
    DELSOLE, R
    REINING, L
    [J]. SURFACE SCIENCE, 1993, 287 : 693 - 698
  • [6] CINI M, 1994, PHYS REV B, V50, P8411
  • [7] HYDRODYNAMIC-MODEL CALCULATION OF 2ND-HARMONIC GENERATION AT A METAL-SURFACE
    CORVI, M
    SCHAICH, WL
    [J]. PHYSICAL REVIEW B, 1986, 33 (06): : 3688 - 3695
  • [8] Optical second-harmonic electroreflectance spectroscopy of a Si(001) metal-oxide-semiconductor structure
    Dadap, JI
    Hu, XF
    Anderson, MH
    Downer, MC
    Lowell, JK
    Aktsipetrov, OA
    [J]. PHYSICAL REVIEW B, 1996, 53 (12) : R7607 - R7609
  • [9] IDENTIFICATION OF STRAINED SILICON LAYERS AT SI-SIO2 INTERFACES AND CLEAN SI SURFACES BY NONLINEAR-OPTICAL SPECTROSCOPY
    DAUM, W
    KRAUSE, HJ
    REICHEL, U
    IBACH, H
    [J]. PHYSICAL REVIEW LETTERS, 1993, 71 (08) : 1234 - 1237
  • [10] NONLINEAR-OPTICAL SPECTROSCOPY AT SILICON INTERFACES
    DAUM, W
    KRAUSE, HJ
    REICHEL, U
    IBACH, H
    [J]. PHYSICA SCRIPTA, 1993, T49B : 513 - 518